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Infineon Technologies AG RF - Driver Amplifiers - BGAP2D20A BGAP2D20A

Description
The BGA P2D20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.2 dB for optimum linearization results of the driven PA. Summary of Features Supply voltage: 5V Gain Flatness: 0.16 dB High Gain: 35.1 dB High OP1dB: 28.9 dBm Low-band: 2.3 - 2.7GHz Packaging: TSNP-16 Benefits BiCMOS technology for an optimized performance High gain and high power for fewer components in line-up Wide BW 2.3-2.7 GHz with best gain flatness Internal Matching saving external matching components Easy design-in and small area footprint Potential Applications Base stations Small cells 5G massive MIMO Distributed Antenna Systems (DAS)
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Suppliers

Company
Product
Description
Supplier Links
RF - Driver Amplifiers - BGAP2D20A - BGAP2D20A - Infineon Technologies AG
Neubiberg, Germany
RF - Driver Amplifiers - BGAP2D20A
BGAP2D20A
RF - Driver Amplifiers - BGAP2D20A BGAP2D20A
The BGA P2D20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.2 dB for optimum linearization results of the driven PA. Summary of Features Supply voltage: 5V Gain Flatness: 0.16 dB High Gain: 35.1 dB High OP1dB: 28.9 dBm Low-band: 2.3 - 2.7GHz Packaging: TSNP-16 Benefits BiCMOS technology for an optimized performance High gain and high power for fewer components in line-up Wide BW 2.3-2.7 GHz with best gain flatness Internal Matching saving external matching components Easy design-in and small area footprint Potential Applications Base stations Small cells 5G massive MIMO Distributed Antenna Systems (DAS)

The BGA P2D20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input is 100Ω differential, the output is 50Ω single-ended. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.2 dB for optimum linearization results of the driven PA.


Summary of Features

  • Supply voltage: 5V
  • Gain Flatness: 0.16 dB
  • High Gain: 35.1 dB
  • High OP1dB: 28.9 dBm
  • Low-band: 2.3 - 2.7GHz
  • Packaging: TSNP-16

Benefits

  • BiCMOS technology for an optimized performance
  • High gain and high power for fewer components in line-up
  • Wide BW 2.3-2.7 GHz with best gain flatness
  • Internal Matching saving external matching components
  • Easy design-in and small area footprint

Potential Applications

  • Base stations
  • Small cells
  • 5G massive MIMO
  • Distributed Antenna Systems (DAS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Switches
Product Number BGAP2D20A
Product Name RF - Driver Amplifiers - BGAP2D20A
Voltage 5 volts
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