Infineon Technologies AG RF - Low Noise Amplifier LNA ICs - 4G/5G MIPI LNA and LNA Bank - BGA9V1MN9 BGA9V1MN9

Description
The BGA9V1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 3.3 GHz to 4.2 GHz. The LNA provides up to 21.0 dB gain and 0.75 dB noise figure at a current consumption of 5.8 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios. The BGA9V1MN9 supports ultra-low bypass current of 2 µA and 1.2 V operating voltage to reduce power consumption. It operates from 1.1 V to 2.0 V supply voltage over temperature. The compact9 pin TSNP-9 package with the dimension of 1.1 x 1.1 mm helps to save space on the PCB. Summary of Features Power gain: 21.0 dB Low noise figure: 0.75 dB Low current consumption: 5.8 mA Frequency range from 3.3 to 4.2 GHz Supply voltage: 1.1 to 2.0 V Integrated MIPI RFFE interface operating in 1.65 to 1.95 V voltage range Software programmable MIPI RFFE USID USID select pin Small form factor 1.1 mm x 1.1 mm High EMI robustness RoHS and WEEE compliant package Potential Applications LTE / 5G Smartphones Applications Mobile devices and smartphones Designers who used this product also designed with BGSA149MN10 | Antenna tuners BGSA14M2N10 | Antenna tuners BGSA147ML10 | Antenna tuners BGSA149M2N10 | Antenna tuners BGS12P2L6 | RF Switches BGS14WMA9 | RF Switches BGM687U50 | 4G/5G MIPI LNA and LNA Bank BGS14M8U9 | RF Switches BGSX22G5A10 | Antenna cross switches BGS12WN6 | RF Switches BGSA149MN10 | Antenna tuners BGSA14M2N10 | Antenna tuners BGSA147ML10 | Antenna tuners BGSA149M2N10 | Antenna tuners BGS12P2L6 | RF Switches BGS14WMA9 | RF Switches BGM687U50 | 4G/5G MIPI LNA and LNA Bank BGS14M8U9 | RF Switches 1 2 3
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Description
The BGA9V1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 3.3 GHz to 4.2 GHz. The LNA provides up to 21.0 dB gain and 0.75 dB noise figure at a current consumption of 5.8 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios. The BGA9V1MN9 supports ultra-low bypass current of 2 µA and 1.2 V operating voltage to reduce power consumption. It operates from 1.1 V to 2.0 V supply voltage over temperature. The compact9 pin TSNP-9 package with the dimension of 1.1 x 1.1 mm helps to save space on the PCB. Summary of Features Power gain: 21.0 dB Low noise figure: 0.75 dB Low current consumption: 5.8 mA Frequency range from 3.3 to 4.2 GHz Supply voltage: 1.1 to 2.0 V Integrated MIPI RFFE interface operating in 1.65 to 1.95 V voltage range Software programmable MIPI RFFE USID USID select pin Small form factor 1.1 mm x 1.1 mm High EMI robustness RoHS and WEEE compliant package Potential Applications LTE / 5G Smartphones Applications Mobile devices and smartphones Designers who used this product also designed with BGSA149MN10 | Antenna tuners BGSA14M2N10 | Antenna tuners BGSA147ML10 | Antenna tuners BGSA149M2N10 | Antenna tuners BGS12P2L6 | RF Switches BGS14WMA9 | RF Switches BGM687U50 | 4G/5G MIPI LNA and LNA Bank BGS14M8U9 | RF Switches BGSX22G5A10 | Antenna cross switches BGS12WN6 | RF Switches BGSA149MN10 | Antenna tuners BGSA14M2N10 | Antenna tuners BGSA147ML10 | Antenna tuners BGSA149M2N10 | Antenna tuners BGS12P2L6 | RF Switches BGS14WMA9 | RF Switches BGM687U50 | 4G/5G MIPI LNA and LNA Bank BGS14M8U9 | RF Switches 1 2 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF - Low Noise Amplifier LNA ICs - 4G/5G MIPI LNA and LNA Bank - BGA9V1MN9 - BGA9V1MN9 - Infineon Technologies AG
Neubiberg, Germany
RF - Low Noise Amplifier LNA ICs - 4G/5G MIPI LNA and LNA Bank - BGA9V1MN9
BGA9V1MN9
RF - Low Noise Amplifier LNA ICs - 4G/5G MIPI LNA and LNA Bank - BGA9V1MN9 BGA9V1MN9
The BGA9V1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 3.3 GHz to 4.2 GHz. The LNA provides up to 21.0 dB gain and 0.75 dB noise figure at a current consumption of 5.8 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios. The BGA9V1MN9 supports ultra-low bypass current of 2 µA and 1.2 V operating voltage to reduce power consumption. It operates from 1.1 V to 2.0 V supply voltage over temperature. The compact9 pin TSNP-9 package with the dimension of 1.1 x 1.1 mm helps to save space on the PCB. Summary of Features Power gain: 21.0 dB Low noise figure: 0.75 dB Low current consumption: 5.8 mA Frequency range from 3.3 to 4.2 GHz Supply voltage: 1.1 to 2.0 V Integrated MIPI RFFE interface operating in 1.65 to 1.95 V voltage range Software programmable MIPI RFFE USID USID select pin Small form factor 1.1 mm x 1.1 mm High EMI robustness RoHS and WEEE compliant package Potential Applications LTE / 5G Smartphones Applications Mobile devices and smartphones Designers who used this product also designed with BGSA149MN10 | Antenna tuners BGSA14M2N10 | Antenna tuners BGSA147ML10 | Antenna tuners BGSA149M2N10 | Antenna tuners BGS12P2L6 | RF Switches BGS14WMA9 | RF Switches BGM687U50 | 4G/5G MIPI LNA and LNA Bank BGS14M8U9 | RF Switches BGSX22G5A10 | Antenna cross switches BGS12WN6 | RF Switches BGSA149MN10 | Antenna tuners BGSA14M2N10 | Antenna tuners BGSA147ML10 | Antenna tuners BGSA149M2N10 | Antenna tuners BGS12P2L6 | RF Switches BGS14WMA9 | RF Switches BGM687U50 | 4G/5G MIPI LNA and LNA Bank BGS14M8U9 | RF Switches 1 2 3

The BGA9V1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 3.3 GHz to 4.2 GHz. The LNA provides up to 21.0 dB gain and 0.75 dB noise figure at a current consumption of 5.8 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios.

The BGA9V1MN9 supports ultra-low bypass current of 2 µA and 1.2 V operating voltage to reduce power consumption. It operates from 1.1 V to 2.0 V supply voltage over temperature. The compact9 pin TSNP-9 package with the dimension of 1.1 x 1.1 mm helps to save space on the PCB.


Summary of Features

  • Power gain: 21.0 dB
  • Low noise figure: 0.75 dB
  • Low current consumption: 5.8 mA
  • Frequency range from 3.3 to 4.2 GHz
  • Supply voltage: 1.1 to 2.0 V
  • Integrated MIPI RFFE interface operating in 1.65 to 1.95 V voltage range
  • Software programmable MIPI RFFE USID
  • USID select pin
  • Small form factor 1.1 mm x 1.1 mm
  • High EMI robustness
  • RoHS and WEEE compliant package

Potential Applications

LTE / 5G Smartphones


Applications

  • Mobile devices and smartphones

Designers who used this product also designed with


  • BGSA149MN10 |
    Antenna tuners
  • BGSA14M2N10 |
    Antenna tuners
  • BGSA147ML10 |
    Antenna tuners
  • BGSA149M2N10 |
    Antenna tuners
  • BGS12P2L6 |
    RF Switches
  • BGS14WMA9 |
    RF Switches
  • BGM687U50 |
    4G/5G MIPI LNA and LNA Bank
  • BGS14M8U9 |
    RF Switches
  • BGSX22G5A10 |
    Antenna cross switches
  • BGS12WN6 |
    RF Switches
  • BGSA149MN10 |
    Antenna tuners
  • BGSA14M2N10 |
    Antenna tuners
  • BGSA147ML10 |
    Antenna tuners
  • BGSA149M2N10 |
    Antenna tuners
  • BGS12P2L6 |
    RF Switches
  • BGS14WMA9 |
    RF Switches
  • BGM687U50 |
    4G/5G MIPI LNA and LNA Bank
  • BGS14M8U9 |
    RF Switches

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Amplifier and Comparator Chips
Product Number BGA9V1MN9
Product Name RF - Low Noise Amplifier LNA ICs - 4G/5G MIPI LNA and LNA Bank - BGA9V1MN9
Standards and Certifications RoHS
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