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Infineon Technologies AG RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6 BGA855N6

Description
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA. The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage. Summary of Features GPS LNA for L2/L5 Frequency Improves GPS accuracy into cm range (~30 cm) Improves GPS for indoor navigation 1.2 V support Designed for high precision GPS devices Benefits High Accuracy Navigation that enabler for ~30 cm accuracy. High linearity that Ideal for Smartphones 5G NSA ready. Wide Bandwidth and one solution for all GPS system. Backwards compatible with standard GNSS LNA that saves cost of design. Potential Applications Enhance GNSS signal sensitivity for band L2/L5, especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 Applications 48V 12V DC-DC converter Consumer electronics Mobile devices and smartphones Semiconductor solutions for home entertainment applications Designers who used this product also designed with BGS18MA12 | RF Switches BGS16MA12 | RF Switches BGA7H1N6 | Multi-purpose LNAs BGSA14GN10 | Antenna tuners BGS12P2L6 | RF Switches BGA824N6 | GNSS LNAs BGS14MPA9 | RF Switches BGS14WMA9 | RF Switches BGS12WN6 | RF Switches BGSX44MA12 | RF Switches BGSX24MU16 | Antenna cross switches BGA729N6 | Multi-purpose LNAs BGA7H1BN6 | Multi-purpose LNAs BGAU1A10 | 4G/5G MIPI LNA and LNA Bank BGC100GN6 | Coupler BGSX22G5A10 | Antenna cross switches BGSX44MU18 | Antenna cross switches ESD133-B1-W01005 | Low capacitance diodes for ESD protection BGS18MA12 | RF Switches BGS16MA12 | RF Switches BGA7H1N6 | Multi-purpose LNAs BGSA14GN10 | Antenna tuners BGS12P2L6 | RF Switches BGA824N6 | GNSS LNAs BGS14MPA9 | RF Switches BGS14WMA9 | RF Switches 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6 - BGA855N6 - Infineon Technologies AG
Neubiberg, Germany
RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6
BGA855N6
RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6 BGA855N6
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA. The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage. Summary of Features GPS LNA for L2/L5 Frequency Improves GPS accuracy into cm range (~30 cm) Improves GPS for indoor navigation 1.2 V support Designed for high precision GPS devices Benefits High Accuracy Navigation that enabler for ~30 cm accuracy. High linearity that Ideal for Smartphones 5G NSA ready. Wide Bandwidth and one solution for all GPS system. Backwards compatible with standard GNSS LNA that saves cost of design. Potential Applications Enhance GNSS signal sensitivity for band L2/L5, especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 Applications 48V 12V DC-DC converter Consumer electronics Mobile devices and smartphones Semiconductor solutions for home entertainment applications Designers who used this product also designed with BGS18MA12 | RF Switches BGS16MA12 | RF Switches BGA7H1N6 | Multi-purpose LNAs BGSA14GN10 | Antenna tuners BGS12P2L6 | RF Switches BGA824N6 | GNSS LNAs BGS14MPA9 | RF Switches BGS14WMA9 | RF Switches BGS12WN6 | RF Switches BGSX44MA12 | RF Switches BGSX24MU16 | Antenna cross switches BGA729N6 | Multi-purpose LNAs BGA7H1BN6 | Multi-purpose LNAs BGAU1A10 | 4G/5G MIPI LNA and LNA Bank BGC100GN6 | Coupler BGSX22G5A10 | Antenna cross switches BGSX44MU18 | Antenna cross switches ESD133-B1-W01005 | Low capacitance diodes for ESD protection BGS18MA12 | RF Switches BGS16MA12 | RF Switches BGA7H1N6 | Multi-purpose LNAs BGSA14GN10 | Antenna tuners BGS12P2L6 | RF Switches BGA824N6 | GNSS LNAs BGS14MPA9 | RF Switches BGS14WMA9 | RF Switches 1 2 3 4 5

The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy.

Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz.

The LNA provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA.

The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage.


Summary of Features

  • GPS LNA for L2/L5 Frequency
  • Improves GPS accuracy into cm range (~30 cm)
  • Improves GPS for indoor navigation
  • 1.2 V support
  • Designed for high precision GPS devices

Benefits

  • High Accuracy Navigation that enabler for ~30 cm accuracy.
  • High linearity that Ideal for Smartphones 5G NSA ready.
  • Wide Bandwidth and one solution for all GPS system.
  • Backwards compatible with standard GNSS LNA that saves cost of design.

Potential Applications

  • Enhance GNSS signal sensitivity for band L2/L5, especially for very high accuracy.
  • Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2

Applications

  • 48V 12V DC-DC converter
  • Consumer electronics
  • Mobile devices and smartphones
  • Semiconductor solutions for home entertainment applications

Designers who used this product also designed with


  • BGS18MA12 |
    RF Switches
  • BGS16MA12 |
    RF Switches
  • BGA7H1N6 |
    Multi-purpose LNAs
  • BGSA14GN10 |
    Antenna tuners
  • BGS12P2L6 |
    RF Switches
  • BGA824N6 |
    GNSS LNAs
  • BGS14MPA9 |
    RF Switches
  • BGS14WMA9 |
    RF Switches
  • BGS12WN6 |
    RF Switches
  • BGSX44MA12 |
    RF Switches
  • BGSX24MU16 |
    Antenna cross switches
  • BGA729N6 |
    Multi-purpose LNAs
  • BGA7H1BN6 |
    Multi-purpose LNAs
  • BGAU1A10 |
    4G/5G MIPI LNA and LNA Bank
  • BGC100GN6 |
    Coupler
  • BGSX22G5A10 |
    Antenna cross switches
  • BGSX44MU18 |
    Antenna cross switches
  • ESD133-B1-W01005 |
    Low capacitance diodes for ESD protection
  • BGS18MA12 |
    RF Switches
  • BGS16MA12 |
    RF Switches
  • BGA7H1N6 |
    Multi-purpose LNAs
  • BGSA14GN10 |
    Antenna tuners
  • BGS12P2L6 |
    RF Switches
  • BGA824N6 |
    GNSS LNAs
  • BGS14MPA9 |
    RF Switches
  • BGS14WMA9 |
    RF Switches

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Switches
Product Number BGA855N6
Product Name RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6
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