Infineon Technologies AG RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6 BGA855N6

Description
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA. The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage. Summary of Features GPS LNA for L2/L5 Frequency Improves GPS accuracy into cm range (~30 cm) Improves GPS for indoor navigation 1.2 V support Designed for high precision GPS devices Benefits High Accuracy Navigation that enabler for ~30 cm accuracy. High linearity that Ideal for Smartphones 5G NSA ready. Wide Bandwidth and one solution for all GPS system. Backwards compatible with standard GNSS LNA that saves cost of design. Potential Applications Enhance GNSS signal sensitivity for band L2/L5, especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 Applications 48 V to 12 V DC-DC converter Consumer electronics Mobile devices and smartphones Semiconductor solutions for home entertainment applications Designers who used this product also designed with BGS15MU14 | RF Switches ESD133-B1-W01005 | Low capacitance diodes for ESD protection BGSX44MU18 | Antenna cross switches BGSX22G6U10 | Antenna cross switches BGS12P2L6 | RF Switches BGC100GN6 | Coupler BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches BGS12WN6 | RF Switches BGS14M8U9 | RF Switches BGS14WMA9 | RF Switches BGA729N6 | Multi-purpose LNAs BGS16MA12 | RF Switches BGS15MU14 | RF Switches ESD133-B1-W01005 | Low capacitance diodes for ESD protection BGSX44MU18 | Antenna cross switches BGSX22G6U10 | Antenna cross switches BGS12P2L6 | RF Switches BGC100GN6 | Coupler BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches 1 2 3 4
Request a Quote Datasheet
Description
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA. The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage. Summary of Features GPS LNA for L2/L5 Frequency Improves GPS accuracy into cm range (~30 cm) Improves GPS for indoor navigation 1.2 V support Designed for high precision GPS devices Benefits High Accuracy Navigation that enabler for ~30 cm accuracy. High linearity that Ideal for Smartphones 5G NSA ready. Wide Bandwidth and one solution for all GPS system. Backwards compatible with standard GNSS LNA that saves cost of design. Potential Applications Enhance GNSS signal sensitivity for band L2/L5, especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 Applications 48 V to 12 V DC-DC converter Consumer electronics Mobile devices and smartphones Semiconductor solutions for home entertainment applications Designers who used this product also designed with BGS15MU14 | RF Switches ESD133-B1-W01005 | Low capacitance diodes for ESD protection BGSX44MU18 | Antenna cross switches BGSX22G6U10 | Antenna cross switches BGS12P2L6 | RF Switches BGC100GN6 | Coupler BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches BGS12WN6 | RF Switches BGS14M8U9 | RF Switches BGS14WMA9 | RF Switches BGA729N6 | Multi-purpose LNAs BGS16MA12 | RF Switches BGS15MU14 | RF Switches ESD133-B1-W01005 | Low capacitance diodes for ESD protection BGSX44MU18 | Antenna cross switches BGSX22G6U10 | Antenna cross switches BGS12P2L6 | RF Switches BGC100GN6 | Coupler BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6 - BGA855N6 - Infineon Technologies AG
Neubiberg, Germany
RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6
BGA855N6
RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6 BGA855N6
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz. The LNA provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA. The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage. Summary of Features GPS LNA for L2/L5 Frequency Improves GPS accuracy into cm range (~30 cm) Improves GPS for indoor navigation 1.2 V support Designed for high precision GPS devices Benefits High Accuracy Navigation that enabler for ~30 cm accuracy. High linearity that Ideal for Smartphones 5G NSA ready. Wide Bandwidth and one solution for all GPS system. Backwards compatible with standard GNSS LNA that saves cost of design. Potential Applications Enhance GNSS signal sensitivity for band L2/L5, especially for very high accuracy. Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 Applications 48 V to 12 V DC-DC converter Consumer electronics Mobile devices and smartphones Semiconductor solutions for home entertainment applications Designers who used this product also designed with BGS15MU14 | RF Switches ESD133-B1-W01005 | Low capacitance diodes for ESD protection BGSX44MU18 | Antenna cross switches BGSX22G6U10 | Antenna cross switches BGS12P2L6 | RF Switches BGC100GN6 | Coupler BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches BGS12WN6 | RF Switches BGS14M8U9 | RF Switches BGS14WMA9 | RF Switches BGA729N6 | Multi-purpose LNAs BGS16MA12 | RF Switches BGS15MU14 | RF Switches ESD133-B1-W01005 | Low capacitance diodes for ESD protection BGSX44MU18 | Antenna cross switches BGSX22G6U10 | Antenna cross switches BGS12P2L6 | RF Switches BGC100GN6 | Coupler BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches 1 2 3 4

The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy.

Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2 bands for a frequency range from 1164 MHz to 1300 MHz.

The LNA provides 17.8 dB gain and 0.6 dB noise figure at a current consumption of 4.8mA.

The BGA855N6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.1 V to 3.3 V supply voltage.


Summary of Features

  • GPS LNA for L2/L5 Frequency
  • Improves GPS accuracy into cm range (~30 cm)
  • Improves GPS for indoor navigation
  • 1.2 V support
  • Designed for high precision GPS devices

Benefits

  • High Accuracy Navigation that enabler for ~30 cm accuracy.
  • High linearity that Ideal for Smartphones 5G NSA ready.
  • Wide Bandwidth and one solution for all GPS system.
  • Backwards compatible with standard GNSS LNA that saves cost of design.

Potential Applications

  • Enhance GNSS signal sensitivity for band L2/L5, especially for very high accuracy.
  • Besides GPS L5 and L2, the GNSS LNA also covers Galileo E5a, E5b, E6, Glonass G3, G2 and Beidou B3 and B2

Applications

  • 48 V to 12 V DC-DC converter
  • Consumer electronics
  • Mobile devices and smartphones
  • Semiconductor solutions for home entertainment applications

Designers who used this product also designed with


  • BGS15MU14 |
    RF Switches
  • ESD133-B1-W01005 |
    Low capacitance diodes for ESD protection
  • BGSX44MU18 |
    Antenna cross switches
  • BGSX22G6U10 |
    Antenna cross switches
  • BGS12P2L6 |
    RF Switches
  • BGC100GN6 |
    Coupler
  • BGSX24MU16 |
    Antenna cross switches
  • BGSX22G5A10 |
    Antenna cross switches
  • BGS12WN6 |
    RF Switches
  • BGS14M8U9 |
    RF Switches
  • BGS14WMA9 |
    RF Switches
  • BGA729N6 |
    Multi-purpose LNAs
  • BGS16MA12 |
    RF Switches
  • BGS15MU14 |
    RF Switches
  • ESD133-B1-W01005 |
    Low capacitance diodes for ESD protection
  • BGSX44MU18 |
    Antenna cross switches
  • BGSX22G6U10 |
    Antenna cross switches
  • BGS12P2L6 |
    RF Switches
  • BGC100GN6 |
    Coupler
  • BGSX24MU16 |
    Antenna cross switches
  • BGSX22G5A10 |
    Antenna cross switches

1
2
3
4

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Amplifier and Comparator Chips
Product Number BGA855N6
Product Name RF - Low Noise Amplifier LNA ICs - GNSS LNAs - BGA855N6
Standards and Certifications RoHS
Unlock Full Specs
to access all available technical data

Similar Products

Operational Amplifier IC - 687-LT1098LCS8 - ERSAELECTRONICS PTE. LTD.
Specs
Device Type Operational Amplifiers
View Details
Audio Special Purpose - IRS2053MPBF - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Device Type Audio Amplifiers
Standards and Certifications RoHS
Package Type 48-VFQFN Exposed Pad
View Details
2.4GHZ Rf Amplifier - 860-BGA614H6327XTSA1 - ERSAELECTRONICS PTE. LTD.
Specs
Device Type RF
Standards and Certifications RoHS
Package Type Tape & Reel (TR)
View Details
2 suppliers
Dual Operational Amplifier IC - 687-LT1113ACN8 - ERSAELECTRONICS PTE. LTD.
Specs
Device Type Operational Amplifiers
View Details