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Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY640-04 (P)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz Hermetically sealed microwave package Potential Applications Quality level for Engineering Models Applications Space applications
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HiRel Silicon Bipolar Transistor - BFY640-04 (P) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY640-04 (P)
HiRel Silicon Bipolar Transistor BFY640-04 (P)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz Hermetically sealed microwave package Potential Applications Quality level for Engineering Models Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • High gain low noise RF transistor
  • High maximum stable gain: Gms 24dB at 1.8 GHz
  • Noise figure F = 0.8 dB at 1.8 GHz
  • Noise figure F = 1.1 dB at 6 GHz
  • Hermetically sealed microwave package

Potential Applications

Quality level for Engineering Models


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY640-04 (P)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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