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Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY193C (P)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz Type Variant No. 08 Potential Applications Quality level for Engineering Models Applications Space applications
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HiRel Silicon Bipolar Transistor - BFY193C (P) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY193C (P)
HiRel Silicon Bipolar Transistor BFY193C (P)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz Type Variant No. 08 Potential Applications Quality level for Engineering Models Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For low noise, high-gain amplifiers up to 2GHz.
  • For linear broadband amplifiers
  • Specified 1/f Noise
  • Hermetically sealed microwave package
  • fT= 8 GHz
  • F = 2.3 dB at 2 GHz
  • Type Variant No. 08

Potential Applications

Quality level for Engineering Models


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY193C (P)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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