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Infineon Technologies AG High Linearity RF Transistors BFP196WN

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High Linearity RF Transistors - BFP196WN - Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFP196WN
High Linearity RF Transistors BFP196WN
NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability. Summary of Features For high voltage applications VCE < 12 V Maximal power Ptot = 700 mW Transition frequency fT = 7.5 GHz Noise figure NFmin = 1.3 dB at 900 MHz Easy to use Pb-free (RoHS compliant) and halogen-free industry Standard SOT343 package with visible leads Potential Applications GNSS active antenna Amplifiers in antenna and telecommunications systems CATV Power amplifier for DECT and PCN systems

NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.


Summary of Features

  • For high voltage applications VCE < 12 V
  • Maximal power Ptot = 700 mW
  • Transition frequency fT = 7.5 GHz
  • Noise figure NFmin = 1.3 dB at 900 MHz
  • Easy to use Pb-free (RoHS compliant) and halogen-free industry
  • Standard SOT343 package with visible leads

Potential Applications

  • GNSS active antenna
  • Amplifiers in antenna and telecommunications systems
  • CATV
  • Power amplifier for DECT and PCN systems
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Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFP196WN
Product Name High Linearity RF Transistors
Package Type SOT343-4-1
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