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Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BF776 BF776

Description
Manufacturer: Infineon Technologies Win Source Part Number: 094964-BF776 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 24dB Frequency - Transition: 46GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.8dB to 1.3dB @ 1.8GHz to 6GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V Typical Gain (hFE) (Min): 180 @ 30mA, 3V Maximum Power Dissipation: 200mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - BF776 - 094964-BF776 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - RF Transistors (BJT) - BF776
094964-BF776
TRANSISTORS - RF Transistors (BJT) - BF776 094964-BF776
Manufacturer: Infineon Technologies Win Source Part Number: 094964-BF776 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 24dB Frequency - Transition: 46GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.8dB to 1.3dB @ 1.8GHz to 6GHz Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V Typical Gain (hFE) (Min): 180 @ 30mA, 3V Maximum Power Dissipation: 200mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 094964-BF776
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 24dB
Frequency - Transition: 46GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.8dB to 1.3dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.7V
Typical Gain (hFE) (Min): 180 @ 30mA, 3V
Maximum Power Dissipation: 200mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 094964-BF776
Product Name TRANSISTORS - RF Transistors (BJT) - BF776
Polarity NPN; NPN
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