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Infineon Technologies AG RF Pin Diode, Antenna Switch BAR63-04

Description
This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions. Summary of Features Low capacitance C = 0.33 pF (typical) at voltage VR = 0 V and frequency f ≥ 1 GHz Low forward resistance RF = 2.1 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz Charge carrier lifetimeτ = 75 ns (typical) Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm) Pb-free, RoHS compliant and halogen-free Potential Applications Optimized for low bias current RF and high-speed interface switches in: Wireless communications High speed data networks
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Suppliers

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RF Pin Diode, Antenna Switch - BAR63-04 - Infineon Technologies AG
Neubiberg, Germany
RF Pin Diode, Antenna Switch
BAR63-04
RF Pin Diode, Antenna Switch BAR63-04
This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions. Summary of Features Low capacitance C = 0.33 pF (typical) at voltage VR = 0 V and frequency f ≥ 1 GHz Low forward resistance RF = 2.1 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz Charge carrier lifetimeτ = 75 ns (typical) Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm) Pb-free, RoHS compliant and halogen-free Potential Applications Optimized for low bias current RF and high-speed interface switches in: Wireless communications High speed data networks

This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low resistance make it suitable for a diversity of switching applications, simplify design-in and support designers in creating versatile end solutions.


Summary of Features

  • Low capacitance C = 0.33 pF (typical) at voltage VR = 0 V and frequency f ≥ 1 GHz
  • Low forward resistance RF = 2.1 Ω (typical) at forward current IF = 5 mA and frequency f = 100 MHz
  • Charge carrier lifetimeτ = 75 ns (typical)
  • Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm)
  • Pb-free, RoHS compliant and halogen-free

Potential Applications

Optimized for low bias current RF and high-speed interface switches in:

  • Wireless communications
  • High speed data networks
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Diodes
Product Number BAR63-04
Product Name RF Pin Diode, Antenna Switch
Diode Type PIN
Life Cycle Stage active
RoHS Compliant RoHS
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