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Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R027M1H AIMDQ75R027M1H

Description
The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost. Summary of Features Highly robust 750 V technology Best-in-class RDS(on) x Qfr Excellent Ron x Qoss and Ron x QG Low Crss/Ciss together and high Vgsth 100% avalanche tested .XT interconnection technology for best-in-class thermal performance Cutting-edge top-side-cooled package Benefits Superior efficiency in hard switching Enables higher switching frequency Higher reliability Withstand bus voltages beyond 500 V Robustness against parasitic turn Unipolar driving Best-in-class thermal dissipation Applications High-voltage DC-DC converter for electric vehicles On-board battery charger (OBC) for electric vehicles
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Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R027M1H - AIMDQ75R027M1H - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R027M1H
AIMDQ75R027M1H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R027M1H AIMDQ75R027M1H
The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost. Summary of Features Highly robust 750 V technology Best-in-class RDS(on) x Qfr Excellent Ron x Qoss and Ron x QG Low Crss/Ciss together and high Vgsth 100% avalanche tested .XT interconnection technology for best-in-class thermal performance Cutting-edge top-side-cooled package Benefits Superior efficiency in hard switching Enables higher switching frequency Higher reliability Withstand bus voltages beyond 500 V Robustness against parasitic turn Unipolar driving Best-in-class thermal dissipation Applications High-voltage DC-DC converter for electric vehicles On-board battery charger (OBC) for electric vehicles

The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

The CoolSiC™ Automotive MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.


Summary of Features

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high Vgsth
  • 100% avalanche tested
  • .XT interconnection technology for best-in-class thermal performance
  • Cutting-edge top-side-cooled package

Benefits

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving
  • Best-in-class thermal dissipation

Applications

  • High-voltage DC-DC converter for electric vehicles
  • On-board battery charger (OBC) for electric vehicles
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number AIMDQ75R027M1H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R027M1H
Polarity N-Channel; N
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