- Trained on our vast library of engineering resources.

Infineon Technologies AG 2N6806

Description
Power Field-Effect Transistor, P-Channel, MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 2N6806 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, P-Channel, MOSFET

Power Field-Effect Transistor, P-Channel, MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2N6806
Polarity P-Channel
Unlock Full Specs
to access all available technical data

Similar Products

Automotive Power MOSFETs - SuperFAP-E3S Model: FMY100N06T - Fuji Electric Corp. of America
Specs
V(BR)DSS 60 volts
rDS(on) 0.0065 ohms
IDSS 100000 milliamps
View Details
Nch 200V 12A Power MOSFET - RCJ120N20 - ROHM Semiconductor GmbH
Specs
Polarity N-Channel
V(BR)DSS 200 volts
IDSS 12000 milliamps
View Details
2 suppliers
MOSFET - AUIRF7732S2TR - VAST STOCK CO., LIMITED
Infineon Technologies AG
View Details
6 suppliers