Hamamatsu Photonics Europe GmbH InGaAs image sensors, Area sensors G16562-0808T

Near-infrared two-dimensional image sensor with 320 × 256 pixels (Spectral response range: 1.12 to 1.85 μm) The G16562-0808T has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by indium bump. The timing generator in the ROIC provides an analog video output which is obtained by just supplying digital inputs. The G16562-0808T has 320 × 256 pixels arrayed at a 20 μm pitch. Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through indium bumps. Electrical signals in the ROIC are converted into voltage signals and then sequentially output from the video line by the shift register. The G16562-0808T is hermetically sealed in a metal package together with a three-stage thermoelectric cooler to deliver stable operation. The dynamic range has been more than doubled compared to conventional products, and integrate while readout (IWR) and multi-line readout functions have been added. Features - Dynamic range: 3500 - 4-port analog output - Frame rate: 503 fps max. (All-line readout mode, integration time=1.98 ms, in IWR operation) - Low dark current - Operation of integrate while readout function and integrate then readout function can be done - Multi-line readout function - Simple operation (built-in timing generator) - Three-stage TE-cooled typs