Hamamatsu Photonics Europe GmbH InGaAs image sensors, Line sensors G14714-1024DG

Description
1024 pixels, high-speed line rate near infrared sensor (0.95 to 1.7 μm) The G14714-1024DG is an InGaAs linear image sensor designed for foreign object detection. The CMOS chip consists of charge amplifiers, shift registers, and timing generator. Charge amplifiers are configured with CMOS transistor array and are bump-bonded to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read out in charge integration mode, high sensitivity and stable operation are attained in a wide spectral response range. The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your application from the available four types using external voltage. Features - High-speed line rate: 40000 lines/s max. - High-speed data rate: 15 MHz max. - Selectable from four conversion efficiency types - Built-in timing generator - Built-in temperature sensor - Room temperature operation
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InGaAs image sensors, Line sensors - G14714-1024DG - Hamamatsu Photonics Europe GmbH
Herrsching am Ammersee, Germany
InGaAs image sensors, Line sensors
G14714-1024DG
InGaAs image sensors, Line sensors G14714-1024DG
1024 pixels, high-speed line rate near infrared sensor (0.95 to 1.7 μm) The G14714-1024DG is an InGaAs linear image sensor designed for foreign object detection. The CMOS chip consists of charge amplifiers, shift registers, and timing generator. Charge amplifiers are configured with CMOS transistor array and are bump-bonded to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read out in charge integration mode, high sensitivity and stable operation are attained in a wide spectral response range. The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your application from the available four types using external voltage. Features - High-speed line rate: 40000 lines/s max. - High-speed data rate: 15 MHz max. - Selectable from four conversion efficiency types - Built-in timing generator - Built-in temperature sensor - Room temperature operation

1024 pixels, high-speed line rate near infrared sensor (0.95 to 1.7 μm)

The G14714-1024DG is an InGaAs linear image sensor designed for foreign object detection. The CMOS chip consists of charge amplifiers, shift registers, and timing generator. Charge amplifiers are configured with CMOS transistor array and are bump-bonded to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read out in charge integration mode, high sensitivity and stable operation are attained in a wide spectral response range. The signal processing circuit on the CMOS chip enables the selection of an optimum conversion efficiency (CE) for your application from the available four types using external voltage.

Features
- High-speed line rate: 40000 lines/s max.
- High-speed data rate: 15 MHz max.
- Selectable from four conversion efficiency types
- Built-in timing generator
- Built-in temperature sensor
- Room temperature operation

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Technical Specifications

  Hamamatsu Photonics Europe GmbH
Product Category CMOS Image Sensors
Product Number G14714-1024DG
Product Name InGaAs image sensors, Line sensors
Horizontal Pixels 1024
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