Hamamatsu Photonics Europe GmbH InGaAs image sensors, Line sensors G11475-512WB

Near infrared sensors (0.9 to 1.85 μm) G11475 to G11478 series is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry. These linear image sensors consist an InGaAs photodiode array and charge amplifiers, offset compensation circuit, shift register, and timing generator formed on a CMOS chip. Charge amplifiers are configured with CMOS transistor array and are connected to each pixel of the InGaAs photodiode array. Since the signal from each pixel is read in charge integration mode, high sensitivity and stable operation are attained in the near infrared region. These sensors feature higher data rates and better linearity characteristics at high gain than the previous products. The package is hermetically sealed providing excellent reliability. The signal processing circuit on the CMOS chip enables the selection of a conversion efficiency (CE) from the available two types using external voltage.