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Fuji Electric Corp. of America Automotive Power MOSFETs SuperFAP-E3S FD Model: FMY47N30ESF

Description
Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.
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Automotive Power MOSFETs - SuperFAP-E3S FD Model: FMY47N30ESF - Fuji Electric Corp. of America
Edison, NJ, United States
Automotive Power MOSFETs
SuperFAP-E3S FD Model: FMY47N30ESF
Automotive Power MOSFETs SuperFAP-E3S FD Model: FMY47N30ESF
Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

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Technical Specifications

  Fuji Electric Corp. of America
Product Category Power MOSFET
Product Number SuperFAP-E3S FD Model: FMY47N30ESF
Product Name Automotive Power MOSFETs
V(BR)DSS 300 volts
rDS(on) 0.0850 ohms
IDSS 47000 milliamps
QG 96 nC
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