- Trained on our vast library of engineering resources.

Fuji Electric Corp. of America Power MOSFETs SuperFAP-E3 Model: FMP08N50E

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

Supplier's Site Datasheet

Technical Specifications

  Fuji Electric Corp. of America
Product Category Power MOSFET
Product Number SuperFAP-E3 Model: FMP08N50E
Product Name Power MOSFETs
V(BR)DSS 500 volts
rDS(on) 0.7900 ohms
IDSS 7500 milliamps
QG 35 nC
Unlock Full Specs
to access all available technical data

Similar Products

Power MOSFETs - SuperFAP-G Model: 2SK3651-01R - Fuji Electric Corp. of America
Specs
V(BR)DSS 250 volts
rDS(on) 0.1000 ohms
IDSS 37000 milliamps
View Details
Power MOSFETs - SuperFAP-G Model: 2SK3581-01S - Fuji Electric Corp. of America
Specs
V(BR)DSS 500 volts
rDS(on) 0.4600 ohms
IDSS 16000 milliamps
View Details
Power MOSFETs - SuperFAP-E3 Model: FMR23N60E - Fuji Electric Corp. of America
Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.2800 ohms
IDSS 23000 milliamps
View Details
Power MOSFETs - Super J  MOS S2FD Model: FML60N150S2FDHF - Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.1500 ohms
IDSS 28700 milliamps
View Details