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Fuji Electric Corp. of America Automotive Power MOSFETs Super J MOS S2FD Model: FMY50N071S2FDA

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Automotive Power MOSFETs - Super J  MOS S2FD Model: FMY50N071S2FDA - Fuji Electric Corp. of America
Edison, NJ, United States
Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

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Technical Specifications

  Fuji Electric Corp. of America
Product Category Power MOSFET
Product Number Super J MOS S2FD Model: FMY50N071S2FDA
Product Name Automotive Power MOSFETs
V(BR)DSS 500 volts
rDS(on) 0.0710 ohms
IDSS 38900 milliamps
QG 98 nC
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