Manufacturer: Fuji Electric
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 984110-FMP20N60S1
Length: 9.9822 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 600 V
Power Dissipation: 150 W
Height: 15.0114 mm
Number of Pins: 3
Width: 4.4958 mm
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220AB
Popularity: Low
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: Unknown
Element Configuration: Single
Max Power Dissipation: 150 W
Turn-On Delay Time: 22 ns
Continuous Drain Current (ID): 20 A
Drain to Source Breakdown Voltage: 600 V
Turn-Off Delay Time: 22 ns
Drain to Source Resistance: 190 mΩ
Gate to Source Voltage (Vgs): 30 V
Threshold Voltage: 3 V
MOSFET, N CHANNEL, 600V, 20A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:-RoHS Compliant: Yes
| Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 984110-FMP20N60S1 | 49X9273 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FMP20N60S1 | Mosfet, N Channel, 600V, 20A, To-220Ab-3; Channel Type Fuji Electric |
| V(BR)DSS | 600 volts | |
| rDS(on) | 0.1900 ohms | |
| PD | 150000 milliwatts | |
| TJ | -55 C (-67 F) |
