Fuji Electric Corp. of America TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2690-01 2SK2690-01

Description
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037573-2SK2690-01 Length: 15.494 mm Drain to Source Voltage (Vdss): 60 V Forward Voltage: 1.15 V Power Dissipation: 125 W Height: 19.5072 mm Number of Pins: 3 Width: 4.4958 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFBG30PBF; IRF740PBF; IRF840PBF; BUZ30AHXKSA1; IPP086N10N3GXKSA1; IPP12CN10LGXKSA1; Popularity: Low Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 15 ns Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 190 ns Drain to Source Resistance: 17 mΩ Gate to Source Voltage (Vgs): 20 V
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2690-01 - 1037573-2SK2690-01 - Win Source Electronics
    Win Source Electronics
  • MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/ - 70212520 - Allied Electronics, Inc.
    Allied Electronics, Inc.
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Description
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037573-2SK2690-01 Length: 15.494 mm Drain to Source Voltage (Vdss): 60 V Forward Voltage: 1.15 V Power Dissipation: 125 W Height: 19.5072 mm Number of Pins: 3 Width: 4.4958 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFBG30PBF; IRF740PBF; IRF840PBF; BUZ30AHXKSA1; IPP086N10N3GXKSA1; IPP12CN10LGXKSA1; Popularity: Low Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 15 ns Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 190 ns Drain to Source Resistance: 17 mΩ Gate to Source Voltage (Vgs): 20 V
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2690-01 - 1037573-2SK2690-01 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2690-01
1037573-2SK2690-01
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2690-01 1037573-2SK2690-01
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037573-2SK2690-01 Length: 15.494 mm Drain to Source Voltage (Vdss): 60 V Forward Voltage: 1.15 V Power Dissipation: 125 W Height: 19.5072 mm Number of Pins: 3 Width: 4.4958 mm Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFBG30PBF; IRF740PBF; IRF840PBF; BUZ30AHXKSA1; IPP086N10N3GXKSA1; IPP12CN10LGXKSA1; Popularity: Low Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 15 ns Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 190 ns Drain to Source Resistance: 17 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Fuji Electric
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037573-2SK2690-01
Length: 15.494 mm
Drain to Source Voltage (Vdss): 60 V
Forward Voltage: 1.15 V
Power Dissipation: 125 W
Height: 19.5072 mm
Number of Pins: 3
Width: 4.4958 mm
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IRFBG30PBF; IRF740PBF; IRF840PBF; BUZ30AHXKSA1; IPP086N10N3GXKSA1; IPP12CN10LGXKSA1;
Popularity: Low
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Turn-On Delay Time: 15 ns
Drain to Source Breakdown Voltage: 60 V
Turn-Off Delay Time: 190 ns
Drain to Source Resistance: 17 mΩ
Gate to Source Voltage (Vgs): 20 V

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ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 80A 60V 0.017ohm MOSFET Transistor
285-2SK2690-01
N-Channel 80A 60V 0.017ohm MOSFET Transistor 285-2SK2690-01
Power Field-Effect Transistor, 80A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-228AA, SC-65, TO-3P, 3 PIN Product overview: 2SK2690-01 from Fuji Electric is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 60V, 0.017ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 60V, 0.017ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2690-01 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 80A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-228AA, SC-65, TO-3P, 3 PIN Product overview: 2SK2690-01 from Fuji Electric is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 60V, 0.017ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 60V, 0.017ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK2690-01 can be used for catalog matching and distributor lookup.

Supplier's Site
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/ - 70212520 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/
70212520
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/ 70212520
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037573-2SK2690-01 285-2SK2690-01 70212520
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2690-01 N-Channel 80A 60V 0.017ohm MOSFET Transistor MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/
V(BR)DSS 60 volts 60 volts
rDS(on) 0.0170 ohms 0.0075 ohms
PD 125000 milliwatts 125000 milliwatts
TJ -55 C (-67 F)
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