Fuji Electric Corp. of America Transistor 2DI-75D-050A

Description
DISCONTINUED BY MANUFACTURER, IGBT MODULE, POWER BIPOLAR TRANSISTOR, 75A I(C), 600V V(BR)CEO, 1-ELEMENT, NPN, BLOCK. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 444016 - Radwell International
    Radwell International
Description
DISCONTINUED BY MANUFACTURER, IGBT MODULE, POWER BIPOLAR TRANSISTOR, 75A I(C), 600V V(BR)CEO, 1-ELEMENT, NPN, BLOCK. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 444016 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
444016
Transistor 444016
DISCONTINUED BY MANUFACTURER, IGBT MODULE, POWER BIPOLAR TRANSISTOR, 75A I(C), 600V V(BR)CEO, 1-ELEMENT, NPN, BLOCK. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, IGBT MODULE, POWER BIPOLAR TRANSISTOR, 75A I(C), 600V V(BR)CEO, 1-ELEMENT, NPN, BLOCK. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 444016
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor - T1G2028536-FS - Qorvo
Qorvo
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor
T1G2028536-FS
Specs
Transistor Technology / Material GaN
Package Type NI-780
Power Gain 19 dB
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SB1165S - 906321-2SB1165S - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SB1165S
2SB1165S
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
GaAs Fet Switches - KS207 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS207
Specs
Operating Frequency 15000 MHz
View Details
55V 160A MOSFET Transistor - 278-AUIRF3805S-7P - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
55V 160A MOSFET Transistor
AUIRF3805S-7P
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 55 volts
View Details
6 suppliers