The J211 is an N-channel JFET designed for sensitive amplifier stages, with a gate-to-source breakdown voltage of -25 V, a drain-to-source saturation current range of 7 to 20 mA, and a gate-to-source cutoff voltage of -2.5 to -4.5 V. It features low noise of 10 nV/√Hz typical, low input capacitance of 4 pF typical, and low gate leakage of 100 pA maximum. Available in SOT23 and TO-92 packages, it operates from -55 to 125 °C and meets UL 94 V-0 flammability rating and RoHS compliance.
JFETs JFET N-Channel -25V Low Ciss Product overview: J211 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, -25V. Search-friendly keywords include transistor, BJT, switching, amplification, N-Channel, -25V, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J211 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 288-J211 |
| Product Name | N-Channel -25V Bipolar Transistor |
| Package Type | Bulk |
