The J177 is a P-channel JFET designed for low-noise switching, chopper, and commutator applications. It is available in TO-92 and SOT23 packages, with a maximum gate-to-source breakdown voltage of 30 V and a typical drain-to-source saturation current (IDSS) of 1.5 mA. The gate-to-source cutoff voltage ranges from 0.8 V to 2.25 V, and the typical on-resistance (Rds(on)) is 300 Ω. The device operates over a junction temperature range of -55°C to 125°C and is RoHS compliant. The molded plastic case meets UL 94 V-0 flammability ratings.
JFETs JFET P-Channel 30V Low Noise Product overview: J177 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, 30V, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J177 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 288-J177 |
| Product Name | P-Channel 30V Bipolar Transistor |
| Package Type | Bulk |
