The 2N4861/A is an N-channel JFET designed for low-noise switching applications at mid to high frequencies, with a gate-to-source breakdown voltage of -30 V, a drain-to-source saturation current of 8 mA minimum, and a gate-to-source cutoff voltage of -0.8 V minimum. It features a typical gate leakage of 50 pA at room temperature and a power dissipation rating of 1800 mW. Available in TO-18, TO-92, and SOT23 packages, it is RoHS compliant and suitable for military and commercial environments with an operating junction temperature range of -55°C to 125°C. The TO-18 package is hermetically sealed.
JFETs JFET N-Channel -30V Low Noise Product overview: 2N4861 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, -30V. Search-friendly keywords include transistor, BJT, switching, amplification, N-Channel, -30V, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N4861 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 288-2N4861 |
| Product Name | N-Channel -30V Bipolar Transistor |
| Package Type | Bulk |
