The 2N4857 is an N-channel JFET designed for low-noise switching applications in mid to high-frequency circuits, with a gate-to-source breakdown voltage of -40 V, a drain-to-source saturation current of 20 mA, and a gate-to-source cutoff voltage ranging from -2 to -6 V. It is available in TO-18, TO-92, and SOT23 packages, with the TO-18 variant being hermetically sealed for military environments. The device features gate leakage typically at 50 pA, power dissipation up to 1800 mW, and operates over a junction temperature range of -55 °C to 125 °C. The SOT23 and TO-92 packages are UL 94 V-0 rated for flame resistance. RoHS compliant and suitable for analog switching, choppers, and commutators.
JFETs JFET N-Channel -40V Low Noise Product overview: 2N4857 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, -40V. Search-friendly keywords include transistor, BJT, switching, amplification, N-Channel, -40V, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N4857 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 288-2N4857 |
| Product Name | N-Channel -40V Bipolar Transistor |
| Package Type | Bulk |
