RS Components, Ltd. 1253453

New C3M Silicon Carbide (SiC) MOSFET technology. Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range. New low-impedance package with driver source. 8 mm of creepage/clearance between Drain and Source. High-speed switching with low output capacitance. High blocking voltage with low Drain-Source On-State Resistance. Avalanche ruggedness. Fast intrinsic diode with low Reverse Recovery Channel Type = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 1000 V Maximum Drain Source Resistance = 90 mOhms Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 1.8V Maximum Gate Source Voltage = -8 V, +19 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 4