Wolfspeed Silicon Carbide MOSFETs C3M0060065J

Silicon Carbide Power MOSFET
C3M^TM MOSFET Technology Features

• 3rd Generation SiC MOSFET technology
• Low inductance package with separate driver source pin
• 7mm of creepage distance between drain and source
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant

Benefits

• Higher system efficiency
• Reduced cooling requirements
• Increased power density
• Increased system switching frequency
• Easy to parallel and simple to drive
• Enable new hard switching PFC topologies (Totem-Pole)

Applications

• EV charging
• Server power supplies
• Solar PV inverters
• UPS
• DC/DC converters

Manufacturer: Wolfspeed, Inc.
Win Source Part Number: 1324553-C3M0060065J
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Surface Mount
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 5mA
Power Dissipation (Max): 136W (Tc)
Supplier Device Package: TO-263-7
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 600 V
Vgs (Max): +15V, -4V
Temperature Range - Operating: -40°C ~ 175°C (TJ)
Case / Package: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
ECCN: EAR99
Fake Threat In the Open Market: 79
MSL Level: 3 (168 Hours)
HTSUS: 8541.29.0095
Other Part Number: 1697-C3M0060065J,-3312-C3M0060065J
Base Product Number: C3M0060065
Drive Voltage (Max Rds On, Min Rds On): 15V
RoHS Status: RoHS Compliant

N-Channel 650V 36A (Tc) 136W (Tc) Surface Mount TO-263-7

SICFET N-CH 650V 36A TO263-7