Systek™ SAP is a family of high-performance build-up processes for IC substrate RDL that provides multiple process flows for different materials.
Product Overview
The Systek SAP copper metallization process is a high performance semi-additive primary metallization for IC substrates with multiple process improvements. The system is specifically designed as a metallization seed layer for unclad build up substrates and is composed of a complete line of process chemistry including desmear, conditioning, activation, and metallization processes. For completion of the build-up process, Systek SAP is compatible with Systek advanced 2-in-1 plating technology, allowing the filling of copper micro vias and plating of traces simultaneously. The combined process improvements of Systek SAP enable very high density circuitry with minimal substrate roughening for enhanced layer performance and reliability.
Product Features
Complete set of process chemicals from desmear through copper
Ionic and colloidal activator options
Low stress electroless copper deposit for excellent reliability
For fine line spacing down to 5/5 µm line and space
Systek™ SAP is a family of high-performance build-up processes for IC substrate RDL that provides multiple process flows for different materials.
Product Overview
The Systek SAP copper metallization process is a high performance semi-additive primary metallization for IC substrates with multiple process improvements. The system is specifically designed as a metallization seed layer for unclad build up substrates and is composed of a complete line of process chemistry including desmear, conditioning, activation, and metallization processes. For completion of the build-up process, Systek SAP is compatible with Systek advanced 2-in-1 plating technology, allowing the filling of copper micro vias and plating of traces simultaneously. The combined process improvements of Systek SAP enable very high density circuitry with minimal substrate roughening for enhanced layer performance and reliability.
Product Features
- Complete set of process chemicals from desmear through copper
- Ionic and colloidal activator options
- Low stress electroless copper deposit for excellent reliability
- For fine line spacing down to 5/5 µm line and space
