Advantech Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C AQD-SD4U8GN32-SEW

Description
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance
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Description
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance
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Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C - AQD-SD4U8GN32-SEW - Advantech
Cincinnati, OH, United States
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C
AQD-SD4U8GN32-SEW
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C AQD-SD4U8GN32-SEW
Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip 100% tested for stability, compatibility and performance

Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C

  • DDR4 3200Mhz Unbuffered SO-DIMM
  • 30u" Gold Plating Thickness
  • Anti-sulfurization resistance
  • 1.2V power consumption
  • Samsung original chip
  • 100% tested for stability, compatibility and performance
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Technical Specifications

  Advantech
Product Category Memory Modules
Product Number AQD-SD4U8GN32-SEW
Product Name Advantech 8G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C
Memory Type DRAM
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