Advantech Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C AQD-SD4U4GN32-SPW1

Description
Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
  • Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C - Advantech
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Description
Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
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Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C - - Advantech
Advantech
Cincinnati, OH, United States
Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C
Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C
Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C DDR4 3200Mhz Unbuffered SO-DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C

Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C

  • DDR4 3200Mhz Unbuffered SO-DIMM
  • 30u" Gold Plating Thickness
  • Anti-sulfurization resistance
  • 1.2V power consumption
  • Samsung original chip
  • wide temperatures from -40° to 85°C
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Technical Specifications

  Advantech
Product Category Memory Modules
Product Name Advantech 4G SO-DDR4-3200 512Mx16 1.2V SAM -40~85C
Memory Type DRAM
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