Advantech 4G SO-DDR3-1600 512X8 1.35V SAM -40~85C AQD-SD3L4GN16-SGW

Description
4G SO-DDR3-1600 512X8 1.35V SAM -40~85C 30u" Gold Plating Thickness Anti-sulfurization resistance Samsung original chip Wide Temp. -40C to +85C 100% tested for stability, compatibility and performance
  • 4G SO-DDR3-1600 512X8 1.35V SAM -40~85C - AQD-SD3L4GN16-SGW - Advantech
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Description
4G SO-DDR3-1600 512X8 1.35V SAM -40~85C 30u" Gold Plating Thickness Anti-sulfurization resistance Samsung original chip Wide Temp. -40C to +85C 100% tested for stability, compatibility and performance
Request a Quote Datasheet

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4G SO-DDR3-1600 512X8 1.35V SAM -40~85C - AQD-SD3L4GN16-SGW - Advantech
Advantech
Cincinnati, OH, United States
4G SO-DDR3-1600 512X8 1.35V SAM -40~85C
AQD-SD3L4GN16-SGW
4G SO-DDR3-1600 512X8 1.35V SAM -40~85C AQD-SD3L4GN16-SGW
4G SO-DDR3-1600 512X8 1.35V SAM -40~85C 30u" Gold Plating Thickness Anti-sulfurization resistance Samsung original chip Wide Temp. -40C to +85C 100% tested for stability, compatibility and performance

4G SO-DDR3-1600 512X8 1.35V SAM -40~85C

  • 30u" Gold Plating Thickness
  • Anti-sulfurization resistance
  • Samsung original chip
  • Wide Temp. -40C to +85C
  • 100% tested for stability, compatibility and performance
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Technical Specifications

  Advantech
Product Category Memory Modules
Product Number AQD-SD3L4GN16-SGW
Product Name 4G SO-DDR3-1600 512X8 1.35V SAM -40~85C
Memory Type DRAM
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