The MADZ-011001 is a terahertz cutoff frequency,gallium arsenide flip chip Schottky barrier diode. Thisdiode is fabricated on a OMCVD epitaxial waferusing a process designed for high device uniformityand extremely low parasitics. This device is fullypassivated with silicon nitride and has an additionallayer of polyimide for scratch protection. Theprotective coatings prevent damage to the junctionduring automated or manual handling. The flip chipconfiguration is suitable for pick and place insertion.
The high cutoff frequency of this diode allows usethrough W band and higher frequencies. Typicalapplications include single and double balancedmixers in radar transceivers, communicationstransceivers, test and measurement equipment, etc.