Teledyne e2v Semiconductors Datasheets for MRAM

Magnetoresistive random access memory (MRAM) stores bits of data by using magnetic charges. MRAM is designed for high density, high speed, and non-volatile devices and has the potential to replace DRAM and Flash (EEPROM) memory.
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Product Name Notes
Teledyne e2v’s MRAMs type EV2A16A is an extended-reliability version of the MR2A16A from Everspin. It is the ideal memory solution for applications that must permanently store and retrieve critical data...