3X Ceramic Parts Company Limited Aluminum Nitride Substrate

Aluminum Nitride (AlN) Substrate Description: AlN substrate is produced by tape casting using AlN powder as raw material and high temperature sintering. It has all the unique properties of AlN material and meets the requirements for electronic packaging baseplate, which makes it the key material in high density, high power and MCM semiconductor devices, HBLED and packaging. Key properties of Aluminum Nitride Ceramic: High thermal conductivity, which is 5 to 10 times of Alumina Thermal expansion coefficient matches with that of silicon Good mechanical property, which is close to Al2O3 and better than BeO Distinct electrical properties, with very high electrical resistivity and low dielectric loss Compatible with circuit materials, multilayer wiring could be used to achieve high density and miniaturization of packaging Non-toxic, environment friendly Properties Sheet of Aluminum Nitride Substate : Property - Unit Typical Values Color - Grey or greyish white Density - g/cm3 ≥3.3 (25℃) Thermal Conductivity (25℃) - W/(m.K) ≥170 (25-350℃) Coefficient of thermal expansion （25-350℃） - /℃ 4.5x10-6 Volume resistivity - Ω.cm >1014 (1MHz) Dielectric Constant (1MHz) - <9.3 Break Strength - KV/mm ≥25.00 Flexural Strength - MPa >350 Warpage - length‰ ≤2‰ Square / Round Aluminum Nitride Substrate General Dimension : Thickness (mm) Dimensions( mm) 0.385 2″×2″ 50.8mm× 50.8mm 3″× 3″ 76.2mm× 76.2mm 4″× 4″ 101.6mm× 101.6mm 4.5″×4.5″ 114.3mm× 114.3mm 6″× 6″ 152.4 mm× 152.4 mm 7.5″× 7.5″ 190.5 mm× 190.5 mm 0.5 0.635 1.0 Diameter (mm) 1.0 Φ16 Φ19 Φ20 Φ26 Φ30 Φ35 Φ40 Φ45 Φ50 Φ52 Φ60 Φ75 Φ80 1.2 1.5 2.0 2.5 Note：special order can be customized per your requirements.