The GTVA355001EC and GTVA35501FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequency band. They feature input and output matching, high efficiency, and thermally-enhanced packages.
- GaN on SiC HEMT technology
- Broadband internal input and output matching
- Typical pulsed CW performance, single side, 3500 MHz, 50 V, 300 μs pulse width, 10% duty cycle
- Output power at P3dB = 500 W
- Drain efficiency = 65%
- Gain = 13 dB
- Pb-free and RoHS compliant