The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with bolt-down flange.
- GaN on SiC HEMT technology
- Input matched
- Typical Pulsed CW performance, 960 – 1215 MHz, 50 V, single side, 128 μs pulse width, 10% duty cycle
- Output power at P3dB = 1400 W
- Efficiency = 68%
- Gain = 17 dB
- Pb-free and RoHS compliant