Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more

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Product Name Notes
RF Power Transistor -- SD2931-12MR 150 W – 50 V moisture resistant HF/VHF DMOS transistor. The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it...
RF Power Transistor -- SD2932BW HF/VHF/UHF RF power N-channel MOSFET. The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 250...
RF Power Transistor -- SD2933-03W HF/VHF/UHF RF power N-channel MOSFET. The SD2933 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 150...
RF Power Transistor -- STAC2933 RF power transistor: HF/VHF/UHF N-channel MOSFETs. The STAC2933 is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up 150...
RF Power Transistor -- STAC3932F RF power transistors HF/VHF/UHF N-channel MOSFETs
RF Power Transistor -- VRF141MP RF Power Vertical MOSFET. The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF148MP RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF150MP RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF151MP RF Power Vertical MOSFET. The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF152MP RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF152 RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness.
RF Power Transistor -- VRF154FLMP RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF157FLMP RF Power Vertical MOSFET. The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF161 RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF161MP RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- VRF2933MP RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,...
RF Power Transistor -- PXAE183708NB-R2
RF Power Transistor -- RF2307
RF Power Transistor -- SD1407
RF Power Transistor -- SD1460
RF Power Transistor -- SD2931-12W
RF Power Transistor -- SD2931-14W
RF Power Transistor -- SD2931-15W
RF Power Transistor -- SRF1257280GSR5
RF Power Transistor -- SRF1287081GR3
RF Power Transistor -- SRF4116
RF Power Transistor -- SRFE1170P-MY
RF Power Transistor -- SRFE6VP61K25NR6
RF Power Transistor -- SRFJ150MP
RF Power Transistor -- SSM2212CPZ-R7
RF Power Transistor -- SSM2212CPZ-RL
RF Power Transistor -- STAC1011-350A
RF Power Transistor -- STAC2932FW
RF Power Transistor -- STAC4932F1-MR
RF Power Transistor -- STAC9200
RF Power Transistor -- UF2805B
RF Power Transistor -- UF28100M
RF Power Transistor -- UF28100V
RF Power Transistor -- UF2810P
RF Power Transistor -- UF28150J
RF Power Transistor -- UF2815B
RF Power Transistor -- UF2820P
RF Power Transistor -- UF2840G
RF Power Transistor -- UF2840P
RF Power Transistor -- VRF141
RF Power Transistor -- VRF141G
RF Power Transistor -- VRF151MQ
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- PXAC213308FV-V1 The PXAC213308FV is a 320-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2100 to 2200 MHz frequency band. Features...
RF Power Transistor -- PXAC241002FC-V1 The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
RF Power Transistor -- PXAC241702FC-V1 The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features...
RF Power Transistor -- PXAC243502FV-V1 The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design...
RF Power Transistor -- PXAC260602FC-V1 The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include...
RF Power Transistor -- PXAC261002FC-V1 The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include...
RF Power Transistor -- PXAC261212FC-V1 The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path...
RF Power Transistor -- PXAD184218FV-V1 The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features...
RF Power Transistor -- PXAD214218FV-V1 The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features...
RF Power Transistor -- PXAE183708NB-V1 The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXAE213708NB-V1 The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PXFC191507FC-V1 The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXFC192207FH-V3 The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXFE181507FC-V1 The PXFE181507FC is a 175-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PXFE211507FC-V1 The PXFE211507FC is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- SD1275-01 The SD1275-01 is a 13.6 V Class C epitaxial Silicon NPN planar transistor designed primarily for VHF communications. The SD1275-01 utilizes an emitter ballasted die geometry to withstand severe load...
RF Power Transistor -- SD2918 The SD2918 is a gold metallized N-Channel MOS field-effect RF power transistor. SD2918 is intended for use in 50 V DC large signal applications up to 200 MHz.
RF Power Transistor -- SD2931-10W The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large...
RF Power Transistor -- SD2932W The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 250 MHz.
RF Power Transistor -- SD2933W The SD2933W is a gold metallized N-Channel MOS field-effect RF power transistor. SD2933W is intended for use in 50 V dc large signal applications up 150 MHz. The SD2933W is...
RF Power Transistor -- SD2941-10RW The SD2941-10 is a gold metallized N-Channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It is offering 25%...
RF Power Transistor -- SD2941-10W The SD2941-10W is a gold metallized N-Channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. SD2941-10W offers 25% lower...
RF Power Transistor -- SD2942W The SD2942W is a gold metallized N-channel MOS field-effect RF power transistor. The SD2942W offers 25% lower RDS(ON) than industry standard and 20% higher power saturation than ST SD2932. These...
RF Power Transistor -- SD2931-11W The SD2943 is a gold metallized
RF Power Transistor -- SD2943W The SD2943 is
RF Power Transistor -- SD3931-10 The SD3931-10 is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 150 MHz.
RF Power Transistor -- SD3932 The SD3932 is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 100V DC large signal applications up to 250 MHz.
RF Power Transistor -- SD3933 The SD3933 is a gold metallized N-channel MOS field-effect RF power transistor. SD3933 is intended for use in 100 V DC large signal applications up to 200 MHz.
RF Power Transistor -- SD4931 The SD4931 is a N-channel MOS field-effect RF power transistor. SD4931 is intended for use in 50 V DC large signal applications up to 250 MHz.
RF Power Transistor -- SD4933 The SD4933 is a N-channel MOS field-effect RF power transistor. SD4933 features higher breakdown voltage and VSWR making SD4933 ideal for use in 50 V ISM applications up to 100...
RF Power Transistor -- SD4933MR The SD4933MR is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V ISM applications up to 100 MHz. The SD4933MR benefits from the latest...
RF Power Transistor -- SD57030 The SD57030 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed...
RF Power Transistor -- SD57030-01 The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed...
RF Power Transistor -- SD57045 The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed...
RF Power Transistor -- SD57045-01 The SD57045-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045-01 is designed...
RF Power Transistor -- SD57120 The SD57120 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed...
RF Power Transistor -- STAC0912-250 The STAC0912-250 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for mode -S, T-CAS, JTIDS, DME or TACAN applications in the 960 to 1215 MHz frequency...
RF Power Transistor -- STAC1011-350 The STAC1011-350 is a common source N-Channel enhancement-mode lateral field-effect RF power transistor designed for avionics applications in the 1030 to 1090 MHz frequency range.
RF Power Transistor -- STAC1214-250 The STAC1214-250 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for L band radar applications.
RF Power Transistor -- STAC150V2-350E The STAC150V2-350E is a high voltage Nchannel MOS field-effect RF power transistor especially designed for 150V Industrial RF power class E generators such as PECVD plasma sputtering, flat panel and...
RF Power Transistor -- STAC2932BW The STAC2932BW is a gold metallized N-channel MOS field-effect RF power transistor. STAC2932BW is intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932BW...
RF Power Transistor -- STAC2942BW The STAC2942BW is a gold metallized N-channel MOS field-effect RF power transistor. STAC2942BW is intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2942BW...
RF Power Transistor -- STAC3932B The STAC3932B is a gold metallized N-channel MOS field-effect RF power transistor. STAC3932B is intended for use in 50 V DC large signal applications up to 250 MHz.
RF Power Transistor -- STAC4932B The STAC4932B is a N-channel MOS field-effect RF power transistor. STAC4932B is intended for 100 V pulse applications up to 250 MHz. STAC4932B is suitable for use in industrial, scientific...
RF Power Transistor -- STAC4932F The STAC4932F is a N-channel MOS field-effect RF power transistor. STAC4932F is intended for 100 V pulse applications up to 250 MHz. STAC4932F is suitable for use in industrial, scientific...
RF Power Transistor -- TA8110K
RF Power Transistor -- TA8110KMTRPBF
The TA8110K is a broadband capable 4W GaN on Silicon power transistor optimized for 30-2700 MHz frequency band. The input and output can be matched on board for best power...
RF Power Transistor -- TA8210D
RF Power Transistor -- TA8210DMTRPBF
The TA8210D is a broadband capable 12.5W GaN on Silicon power transistor covering 20MHz to 3GHz frequency bands for power amplifier applications. The input and output can be matched on...
RF Power Transistor -- TA9110K
RF Power Transistor -- TA9110KMTRPBF
The TA9110K is a broadband GaN power transistor capable ofdelivering 6W CW from 30MHz to 4.0GHz frequency band. Thetransistor can be used at lower frequencies with reduced outputpower. The input...
RF Power Transistor -- TA9210D The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and...
RF Power Transistor -- TA9310E The TA9310E is a broadband GaN power transistor capable of delivering 20W CW from 500MHz to 4.0GHz frequency band. The transistor can be used at lower frequencies with reduced output...
RF Power Transistor -- VRF150 The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF151 The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF151G The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters...
RF Power Transistor -- VRF154FL The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
RF Power Transistor -- VRF157FL The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
RF Power Transistor -- VRF2933 The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF2944 The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
RF Power Transistor -- VRF3933 The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.

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