Richardson RFPD Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| RF Power Transistor -- SD2931-12MR | 150 W – 50 V moisture resistant HF/VHF DMOS transistor. The SD2931-12MR is a gold metallized Nchannel MOS field-effect RF power transistor. Electrically identical to the standard SD2931 MOSFET, it... |
| RF Power Transistor -- SD2932BW | HF/VHF/UHF RF power N-channel MOSFET. The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 250... |
| RF Power Transistor -- SD2933-03W | HF/VHF/UHF RF power N-channel MOSFET. The SD2933 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 150... |
| RF Power Transistor -- STAC2933 | RF power transistor: HF/VHF/UHF N-channel MOSFETs. The STAC2933 is a gold metallized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up 150... |
| RF Power Transistor -- STAC3932F | RF power transistors HF/VHF/UHF N-channel MOSFETs |
| RF Power Transistor -- VRF141MP | RF Power Vertical MOSFET. The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF148MP | RF Power Vertical MOSFET. The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF150MP | RF Power Vertical MOSFET. The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF151MP | RF Power Vertical MOSFET. The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF152MP | RF Power Vertical MOSFET. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF152 | RF Power Vertical Mosfet. The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness. |
| RF Power Transistor -- VRF154FLMP | RF Power Vertical MOSFET. The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF157FLMP | RF Power Vertical MOSFET. The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF161 | RF Power Vertical MOSFET. The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF161MP | RF Power Vertical MOSFET. The VRF161MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
| RF Power Transistor -- VRF2933MP | RF Power Vertical MOSFET. The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness,... |
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RF Power Transistor -- PXAE183708NB-R2
RF Power Transistor -- RF2307 RF Power Transistor -- SD1407 RF Power Transistor -- SD1460 RF Power Transistor -- SD2931-12W RF Power Transistor -- SD2931-14W RF Power Transistor -- SD2931-15W RF Power Transistor -- SRF1257280GSR5 RF Power Transistor -- SRF1287081GR3 RF Power Transistor -- SRF4116 RF Power Transistor -- SRFE1170P-MY RF Power Transistor -- SRFE6VP61K25NR6 RF Power Transistor -- SRFJ150MP RF Power Transistor -- SSM2212CPZ-R7 RF Power Transistor -- SSM2212CPZ-RL RF Power Transistor -- STAC1011-350A RF Power Transistor -- STAC2932FW RF Power Transistor -- STAC4932F1-MR RF Power Transistor -- STAC9200 RF Power Transistor -- UF2805B RF Power Transistor -- UF28100M RF Power Transistor -- UF28100V RF Power Transistor -- UF2810P RF Power Transistor -- UF28150J RF Power Transistor -- UF2815B RF Power Transistor -- UF2820P RF Power Transistor -- UF2840G RF Power Transistor -- UF2840P RF Power Transistor -- VRF141 RF Power Transistor -- VRF141G RF Power Transistor -- VRF151MQ |
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the... |
| RF Power Transistor -- PXAC213308FV-V1 | The PXAC213308FV is a 320-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2100 to 2200 MHz frequency band. Features... |
| RF Power Transistor -- PXAC241002FC-V1 | The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include... |
| RF Power Transistor -- PXAC241702FC-V1 | The PXAC241702FC is a 28 V LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features... |
| RF Power Transistor -- PXAC243502FV-V1 | The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design... |
| RF Power Transistor -- PXAC260602FC-V1 | The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include... |
| RF Power Transistor -- PXAC261002FC-V1 | The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include... |
| RF Power Transistor -- PXAC261212FC-V1 | The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path... |
| RF Power Transistor -- PXAD184218FV-V1 | The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features... |
| RF Power Transistor -- PXAD214218FV-V1 | The PXAD214218FV is a 430-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features... |
| RF Power Transistor -- PXAE183708NB-V1 | The PXAE183708NB is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,... |
| RF Power Transistor -- PXAE213708NB-V1 | The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2180 MHz frequency band. Features include input matching, high gain... |
| RF Power Transistor -- PXFC191507FC-V1 | The PXFC191507FC is a 150-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,... |
| RF Power Transistor -- PXFC192207FH-V3 | The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching,... |
| RF Power Transistor -- PXFE181507FC-V1 | The PXFE181507FC is a 175-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,... |
| RF Power Transistor -- PXFE211507FC-V1 | The PXFE211507FC is a 170-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching,... |
| RF Power Transistor -- SD1275-01 | The SD1275-01 is a 13.6 V Class C epitaxial Silicon NPN planar transistor designed primarily for VHF communications. The SD1275-01 utilizes an emitter ballasted die geometry to withstand severe load... |
| RF Power Transistor -- SD2918 | The SD2918 is a gold metallized N-Channel MOS field-effect RF power transistor. SD2918 is intended for use in 50 V DC large signal applications up to 200 MHz. |
| RF Power Transistor -- SD2931-10W | The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large... |
| RF Power Transistor -- SD2932W | The SD2932 is a gold metalized N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 250 MHz. |
| RF Power Transistor -- SD2933W | The SD2933W is a gold metallized N-Channel MOS field-effect RF power transistor. SD2933W is intended for use in 50 V dc large signal applications up 150 MHz. The SD2933W is... |
| RF Power Transistor -- SD2941-10RW | The SD2941-10 is a gold metallized N-Channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It is offering 25%... |
| RF Power Transistor -- SD2941-10W | The SD2941-10W is a gold metallized N-Channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. SD2941-10W offers 25% lower... |
| RF Power Transistor -- SD2942W | The SD2942W is a gold metallized N-channel MOS field-effect RF power transistor. The SD2942W offers 25% lower RDS(ON) than industry standard and 20% higher power saturation than ST SD2932. These... |
| RF Power Transistor -- SD2931-11W | The SD2943 is a gold metallized |
| RF Power Transistor -- SD2943W | The SD2943 is |
| RF Power Transistor -- SD3931-10 | The SD3931-10 is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 100 V DC large signal applications up to 150 MHz. |
| RF Power Transistor -- SD3932 | The SD3932 is a gold metallized N-channel MOS field-effect RF power transistor. It is intended for use in 100V DC large signal applications up to 250 MHz. |
| RF Power Transistor -- SD3933 | The SD3933 is a gold metallized N-channel MOS field-effect RF power transistor. SD3933 is intended for use in 100 V DC large signal applications up to 200 MHz. |
| RF Power Transistor -- SD4931 | The SD4931 is a N-channel MOS field-effect RF power transistor. SD4931 is intended for use in 50 V DC large signal applications up to 250 MHz. |
| RF Power Transistor -- SD4933 | The SD4933 is a N-channel MOS field-effect RF power transistor. SD4933 features higher breakdown voltage and VSWR making SD4933 ideal for use in 50 V ISM applications up to 100... |
| RF Power Transistor -- SD4933MR | The SD4933MR is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V ISM applications up to 100 MHz. The SD4933MR benefits from the latest... |
| RF Power Transistor -- SD57030 | The SD57030 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed... |
| RF Power Transistor -- SD57030-01 | The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed... |
| RF Power Transistor -- SD57045 | The SD57045 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045 is designed... |
| RF Power Transistor -- SD57045-01 | The SD57045-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045-01 is designed... |
| RF Power Transistor -- SD57120 | The SD57120 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed... |
| RF Power Transistor -- STAC0912-250 | The STAC0912-250 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for mode -S, T-CAS, JTIDS, DME or TACAN applications in the 960 to 1215 MHz frequency... |
| RF Power Transistor -- STAC1011-350 | The STAC1011-350 is a common source N-Channel enhancement-mode lateral field-effect RF power transistor designed for avionics applications in the 1030 to 1090 MHz frequency range. |
| RF Power Transistor -- STAC1214-250 | The STAC1214-250 is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for L band radar applications. |
| RF Power Transistor -- STAC150V2-350E | The STAC150V2-350E is a high voltage Nchannel MOS field-effect RF power transistor especially designed for 150V Industrial RF power class E generators such as PECVD plasma sputtering, flat panel and... |
| RF Power Transistor -- STAC2932BW | The STAC2932BW is a gold metallized N-channel MOS field-effect RF power transistor. STAC2932BW is intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2932BW... |
| RF Power Transistor -- STAC2942BW | The STAC2942BW is a gold metallized N-channel MOS field-effect RF power transistor. STAC2942BW is intended for use in 50 V DC large signal applications up to 250 MHz. The STAC2942BW... |
| RF Power Transistor -- STAC3932B | The STAC3932B is a gold metallized N-channel MOS field-effect RF power transistor. STAC3932B is intended for use in 50 V DC large signal applications up to 250 MHz. |
| RF Power Transistor -- STAC4932B | The STAC4932B is a N-channel MOS field-effect RF power transistor. STAC4932B is intended for 100 V pulse applications up to 250 MHz. STAC4932B is suitable for use in industrial, scientific... |
| RF Power Transistor -- STAC4932F | The STAC4932F is a N-channel MOS field-effect RF power transistor. STAC4932F is intended for 100 V pulse applications up to 250 MHz. STAC4932F is suitable for use in industrial, scientific... |
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RF Power Transistor -- TA8110K
RF Power Transistor -- TA8110KMTRPBF |
The TA8110K is a broadband capable 4W GaN on Silicon power transistor optimized for 30-2700 MHz frequency band. The input and output can be matched on board for best power... |
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RF Power Transistor -- TA8210D
RF Power Transistor -- TA8210DMTRPBF |
The TA8210D is a broadband capable 12.5W GaN on Silicon power transistor covering 20MHz to 3GHz frequency bands for power amplifier applications. The input and output can be matched on... |
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RF Power Transistor -- TA9110K
RF Power Transistor -- TA9110KMTRPBF |
The TA9110K is a broadband GaN power transistor capable ofdelivering 6W CW from 30MHz to 4.0GHz frequency band. Thetransistor can be used at lower frequencies with reduced outputpower. The input... |
| RF Power Transistor -- TA9210D | The TA9210D is a broadband capable 12.5W GaN on Silicon power transistor covering 30MHz to 2.7GHz frequency band with a single match. TA9210D is usable upto 4GHz. The input and... |
| RF Power Transistor -- TA9310E | The TA9310E is a broadband GaN power transistor capable of delivering 20W CW from 500MHz to 4.0GHz frequency band. The transistor can be used at lower frequencies with reduced output... |
| RF Power Transistor -- VRF150 | The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. |
| RF Power Transistor -- VRF151 | The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. |
| RF Power Transistor -- VRF151G | The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters... |
| RF Power Transistor -- VRF154FL | The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. |
| RF Power Transistor -- VRF157FL | The VRF157FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion. |
| RF Power Transistor -- VRF2933 | The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. |
| RF Power Transistor -- VRF2944 | The VRF2944 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. |
| RF Power Transistor -- VRF3933 | The VRF3933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. |
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