Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Product Name Notes
RF Power Transistor -- PH1090-175L
RF Power Transistor -- PH1090-350L
RF Power Transistor -- PH1090-550S
Avionics Power Transistors
RF Power Transistor -- NPT25100
RF Power Transistor -- NPT25100P
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- NPT35015
RF Power Transistor -- NPTB00004
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- MRFE6S9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source amplifier applications...
RF Power Transistor -- MW6S010GNR1
RF Power Transistor -- MW6S010NR1
Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- MW6S004NT1 Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- MRFG35003N6AT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor. Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use...
RF Power Transistor -- NPT1010 Gallium Nitride 28V, 100W RF Power Transistor. Built using the SIGANTIC© NRF1 process - A proprietary GaN-on-Silicon technology.
RF Power Transistor -- NPT25015 Gallium Nitride 28V, 23W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- NPT1012 Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC© NRF1 process - A proprietary GaN-on-Silicon technology.
RF Power Transistor -- NPT1012B
RF Power Transistor -- NPTB00025B
Gallium Nitride 28V, 25W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- NPT1004D Gallium Nitride 28V, 45W RF Power Transistor. Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
RF Power Transistor -- MRFE6VP5300GNR1
RF Power Transistor -- MRFE6VP5300NR1
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land...
RF Power Transistor -- MRFE6VP61K25HR5 High Ruggedness N-Channel. Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land...
RF Power Transistor -- PH2856-160 Linear Accelerator Power Transistors
RF Power Transistor -- MRF8S9120NR3 N--Channel Enhancement--Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular...
RF Power Transistor -- MRF8S7120NR3 N--Channel Enhancement--Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular...
RF Power Transistor -- MRFE6VP6300HSR5 N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and...
RF Power Transistor -- MRFE6VP8600HR5 Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices are ideally suited for use in analog or...
RF Power Transistor -- PH1113-100
RF Power Transistor -- PH1214-110M
RF Power Transistor -- PH1214-12M
RF Power Transistor -- PH1214-220M
RF Power Transistor -- PH1214-25M
RF Power Transistor -- PH1214-2M
RF Power Transistor -- PH1214-55EL
RF Power Transistor -- PH1214-6M
RF Power Transistor -- PH1214-80M
RF Power Transistor -- PH2226-110M
RF Power Transistor -- PH2226-50M
RF Power Transistor -- PH2729-110M
RF Power Transistor -- PH2729-25M
RF Power Transistor -- PH2729-65M
RF Power Transistor -- PH2729-8.5M
RF Power Transistor -- PH2731-20M
RF Power Transistor -- PH2731-5M
RF Power Transistor -- PH2731-75L
RF Power Transistor -- PH2931-20M
RF Power Transistor -- PH3134-10M
RF Power Transistor -- PH3134-25M
RF Power Transistor -- PH3134-30S
RF Power Transistor -- PH3134-65M
RF Power Transistor -- PH3135-20M
RF Power Transistor -- PH3135-25S
RF Power Transistor -- PH3135-5M
RF Power Transistor -- PH3135-65M
RF Power Transistor -- PH3135-90S
Radar Power Transistors
RF Power Transistor -- MRFE6S9045NR1 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this...
RF Power Transistor -- MRF8S7170NR3 RF Power Field Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C...
RF Power Transistor -- MRF8S9232NR3 RF Power Field Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class...
RF Power Transistor -- MRF8S9200NR3 RF Power Field Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class...
RF Power Transistor -- MRFE6S9130HR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier...
RF Power Transistor -- MRFE6VP61K25HS6 RF Power Field Effect Transistors. High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs. These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog...
RF Power Transistor -- MRF8S8260HR5
RF Power Transistor -- MRF8S8260HSR5
RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class...
RF Power Transistor -- MRF8S9260HSR5 RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class...
RF Power Transistor -- MRFE6S8046GNR1 RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier...
RF Power Transistor -- MRFE6VP5150GNR1
RF Power Transistor -- MRFE6VP5150NR1
RF Power LDMOS Transistor. This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
RF Power Transistor -- MRFE6VP100HR5
RF Power Transistor -- MRFE6VP100HSR5
RF Power LDMOS Transistors. High Ruggedness N—Channel Enhancement--Mode Lateral MOSFETs. RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to...
RF Power Transistor -- MRFE6VS25LR5
RF Power Transistor -- MRFE6VS25NR1
RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. This device is fabricated using Freescale.s enhanced ruggedness...
RF Power Transistor -- PD20010STR-E
RF Power Transistor -- PD20010TR-E
RF Power Transistor, LDMOST Plastic Family N-Channel Enhancement-Mode Lateral MOSFETs. The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband...
RF Power Transistor -- PD54008TR-E RF Power Transistor, LDMOST Plastic Family N-Channel Enhancement-Mode Lateral MOSFETs. The PD54008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad...
RF Power Transistor -- PD55015TR-E RF Power Transistor, LDMOST Plastic Family N-Channel Enhancement-Mode Lateral MOSFETs. The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad...
RF Power Transistor -- PD85006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
RF Power Transistor -- PD20010S-E RF Power Transistor, LDMOST Plastic Family. N-Channel Enhancement-Mode Lateral MOSFETs. The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband...
RF Power Transistor -- MRFE6VS25GNR1 RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Freescale’s enhanced ruggedness...
RF Power Transistor -- MRF8VP13350NR5
RF Power Transistor -- MRFE6VP6300GSR5
RF Power Transistor -- MRFX1K80GNR5
RF Power Transistor -- MS1226MP
RF Power Transistor -- MS1227D
RF Power Transistor -- MS1406/2N5642
RF Power Transistor -- MS2248
RF Power Transistor -- MS2279
RF Power Transistor -- MS2280A
RF Power Transistor -- NE55410GR-A
RF Power Transistor -- NE6500379A-T1-A
RF Power Transistor -- NPT1004DTR
RF Power Transistor -- NPT2018-000
RF Power Transistor -- NPT2024
RF Power Transistor -- PAFT31150NR5
RF Power Transistor -- PAS1065
RF Power Transistor -- PAS1066
RF Power Transistor -- PAS1068
RF Power Transistor -- PAS1069
RF Power Transistor -- PAS1074
RF Power Transistor -- PD20015-E
RF Power Transistor -- PH1090-15L
RF Power Transistor -- PH1090-700B
RF Power Transistor -- PH1090-75L
RF Power Transistor -- PH1214-100EL
RF Power Transistor -- PH1214-300M
RF Power Transistor -- PH1214-40M
RF Power Transistor -- PH2729-130M
RF Power Transistor -- PRFE6VP61K25NR6
RF Power Transistor -- PTFA041501F-V4
RF Power Transistor -- PTFA072401FL-V5
RF Power Transistor -- PTFA080551F-V4
RF Power Transistor -- PTFA180701E-V4
RF Power Transistor -- PTFB201402FC-V2
RF Power Transistor -- PTRA084858NF-V1
RF Power Transistor -- PTRA094858NF-V1
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- MRFE6VP5600HR5 The MRFE6VP5600HR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HR6 The MRFE6VP5600HR6 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP5600HSR5 The MRFE6VP5600HSR5 is an extremely rugged 600W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP6300HR5 The MRFE6VP6300HR5 is an extremely rugged 300W LDMOS transistor capable of withstanding a near 100% load mismatch of 65:1 VSWR at full CW power. These devices offer 50 volt operation,...
RF Power Transistor -- MRFE6VP8600HSR5 The MRFE6VP8600H is designed for UHF broadcast & industrial designs, and it is the latest addition to Freescale’s portfolio of rugged RF LDMOS power transistors. Operating from 470 – 860...
RF Power Transistor -- MRFX035HR5 The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from...
RF Power Transistor -- MRFX1K80HR5
RF Power Transistor -- PRFX1K80HR5
The MRFX1K80H is based on NXP’s Xtra High Voltage LDMOS technology, designed for drain voltages up to 65V. This technology enables; fewer transistors to combine in high power systems, ease...
RF Power Transistor -- MRFX1K80NR5 The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease...
RF Power Transistor -- MS1076B The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and...
RF Power Transistor -- NE5500479A-A The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi...
RF Power Transistor -- NE5510279A The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology...
RF Power Transistor -- NEM090303M-28 The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies...
RF Power Transistor -- NEM090603M-28 The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base...
RF Power Transistor -- NEM090853P-28 The NEM090853P-28 is an N-channel enhancement-mode lateral MOS FET designed for 0.8 to 1.0 GHz, 90 W single-end power amplifier applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured...
RF Power Transistor -- NPT1015B The NPT1015 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device is designed for CW, pulsed, and linear operation with output power levels to 50W (47...
RF Power Transistor -- NPT2010 The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W...
RF Power Transistor -- NPT2018 The NPT2018 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 12W...
RF Power Transistor -- NPT2019 The NPT2019 GaN HEMT is a wideband transistor optimized for DC-2.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 25W...
RF Power Transistor -- NPT2020 The NPT2020 GaN HEMT is a wideband transistor optimized for DC-3.5 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels exceeding 50W...
RF Power Transistor -- NPT2021 The NPT2021 GaN HEMT is a wideband transistor optimized for DC - 2.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W...
RF Power Transistor -- NPT2022 The NPT2022 GaN HEMT is a wideband transistor optimized for DC-2 GHz operation. This device has been designed for saturated and linear operation with output power levels to 100W (50...
RF Power Transistor -- NPTB00004A The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W...
RF Power Transistor -- PD20010-E The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in...
RF Power Transistor -- PD54003-E The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common...
RF Power Transistor -- PD54008-E
RF Power Transistor -- PD54008S-E
The PD54008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V...
RF Power Transistor -- PD54008L-E The PD54008L-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD54008L-E is designed for high gain, broad band commercial and industrial applications. PD54008L-E operates at 7 V...
RF Power Transistor -- PD55003S-E The PD55003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V...
RF Power Transistor -- PD55003-E The PD55003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. PD55003 is designed for high gain, broad band commercial and industrial applications. PD55003 operates at 12 V...
RF Power Transistor -- PD55003L-E The PD55003L-E is a common source Channel, enhancement-mode lateral Field-Effect RF power transistor. PD55003L-E is designed for high gain, broadband commercial and industrial application. PD55003L-E operates at 12V in common...
RF Power Transistor -- PD55008S-E The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V...
RF Power Transistor -- PD55008-E
RF Power Transistor -- PD55008TR-E
The PD55008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD55008 is designed for high gain, broad band commercial and industrial applications. PD55008 operates at 12 V...
RF Power Transistor -- PD55015S-E
RF Power Transistor -- PD55015STR-E
The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V...
RF Power Transistor -- PD55015-E The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD55015 is designed for high gain, broad band commercial and industrial applications. PD55015 operates at 12 V...
RF Power Transistor -- PD55025-E
RF Power Transistor -- PD55025TR-E
The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V...
RF Power Transistor -- PD55025S-E The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD55025 is designed for high gain, broad band commercial and industrial applications. PD55025 operates at 12 V...
RF Power Transistor -- PD57006STR-E The PD57006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V...
RF Power Transistor -- PD57018S-E
RF Power Transistor -- PD57018STR-E
RF Power Transistor -- PD57018TR-E
The PD57018 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in...
RF Power Transistor -- PD57018-E The PD57018 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. PD57018 is designed for high gain, broad band commercial and industrial applications. PD57018 operates at 28V in...
RF Power Transistor -- PD57030S-E The PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V...
RF Power Transistor -- PD57030-E The PD57030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD57030 is designed for high gain, broad band commercial and industrial applications. PD57030 operates at 28 V...
RF Power Transistor -- PD57045-E The PD57045 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD57045 is designed for high gain, broad band commercial and industrial applications. PD57045 operates at 28 V...
RF Power Transistor -- PD57060S-E
RF Power Transistor -- PD57060TR-E
The PD57060-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in...
RF Power Transistor -- PD57060-E The PD57060-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. PD57060-E is designed for high gain, broad band commercial and industrial applications. PD57060-E operates at 28V in...
RF Power Transistor -- PD57070-E
RF Power Transistor -- PD57070S-E
The PD57070 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V...
RF Power Transistor -- PD84001 The PD84001-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. PD84001-E is designed for high gain, broad band commercial and industrial applications. PD84001-E operates at 7V in...
RF Power Transistor -- PD84002 The PD84002 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V...
RF Power Transistor -- PD84006-E The PD84006-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V...
RF Power Transistor -- PD84006L-E The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. PD84006L-E is designed for high gain, broad band commercial and industrial applications. PD84006L-E operates at 7 V...
RF Power Transistor -- PD84008-E The PD84008-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in...
RF Power Transistor -- PD84008L-E The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. PD84008L-E is designed for high gain, broadband commercial and industrial applications. PD84008L-E operates at 7.5 V in...
RF Power Transistor -- PD84010-E The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common...
RF Power Transistor -- PD85004 The PD85004 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. PD85004 is designed for high gain, broad band commercial and industrial applications. PD85004 operates at 13.6 V...
RF Power Transistor -- PD85006TR-E The PD85006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in...
RF Power Transistor -- PD85006L-E The PD85006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. PD85006L-E is designed for high gain, broadband commercial and industrial applications. PD85006L-E operates at 13.6 V in...
RF Power Transistor -- PD85015STR-E
RF Power Transistor -- PD85015TR-E
The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in...
RF Power Transistor -- PD85015-E The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. PD85015-E is designed for high gain, broadband commercial and industrial applications. PD85015-E operates at 13.6 V in...
RF Power Transistor -- PD85015S-E The PD85015S-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in...
RF Power Transistor -- PD85025-E
RF Power Transistor -- PD85025STR-E
RF Power Transistor -- PD85025TR-E
The PD85025-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in...
RF Power Transistor -- PD85025C The PD85025C is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in...
RF Power Transistor -- PD85025S-E The PD85025S-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. PD85025S-E is designed for high gain, broadband commercial and industrial applications. PD85025S-E operates at 13.6 V in...
RF Power Transistor -- PD85035-E
RF Power Transistor -- PD85035STR-E
The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in...
RF Power Transistor -- PD85035S-E The PD85035S-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. PD85035S-E is designed for high gain, broadband commercial and industrial applications. PD85035S-E operates at 13.6 V in...
RF Power Transistor -- PTAB182002FC-V1 The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PTAC210802FC-V1 The PTAC210802FC is an 80-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
RF Power Transistor -- PTAC240502FC-V1 The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include...
RF Power Transistor -- PTAC260302FC-V1 The PTAC260302FC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main)...
RF Power Transistor -- PTFA220121MV4R1 The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS device offers excellent gain, efficiency and linearity performance in...
RF Power Transistor -- PTFC210202FC-V1 The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS...
RF Power Transistor -- PTFC260202FC-V1 The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS...
RF Power Transistor -- PTFC261402FC-V1 The PTFC261402FC is a 140-watt LDMOS FET intended for use in multi-standard cellular power amplifi er applications in the 2620 to 2690 MHz frequency band. Features include input and output...
RF Power Transistor -- PTFC262157FH-V1 The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band. Input and output matching have been optimized for...
RF Power Transistor -- PTFC270051M-V2 The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
RF Power Transistor -- PTFC270101M-V1 The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity...
RF Power Transistor -- PTRA082808NF-V1 The PTRA082808NF is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 790 to 820 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PTRA083818NF-V1 The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA084808NF-V1 The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA087008NB-V1 The PTRA087008NB is a 650-watt LDMOS FET. It is designed for use in multi-standard cellular power amplifier applications from 755 MHz to 805 MHz. Manufactured with Wolfspeed's advanced LDMOS process,...
RF Power Transistor -- PTRA093302FC-V1 The PTRA093302FC is a 330-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 746 MHz to 768 MHz frequency band. Features...
RF Power Transistor -- PTRA093818NF-V1 The PTRA093818NF is a 415-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA094252FC-V1 The PTRA094252FC is a 208-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 746 to 960 MHz frequency band. Features include input matching, high gain...
RF Power Transistor -- PTRA094808NF-V1 The PTRA094808NF is a 480-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 859 to 960 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PTRA097008NB-V1 The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,...
RF Power Transistor -- PTVA030121EA-V1 The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package.
RF Power Transistor -- PTVA035002EV-R0
RF Power Transistor -- PTVA035002EV-V1
The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
RF Power Transistor -- PTVA043502EC-V1 The PTVA043502EC is a LDMOS FET designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with...
RF Power Transistor -- PTVA043502FC-V1 The PTVA043502FC is a LDMOS FET designed for use in power amplifier applications in the 470 to 860 MHz frequency band. Features include high gain and thermally enhanced package with...
RF Power Transistor -- PTVA047002EV-V1 The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
RF Power Transistor -- PTVA082407NF-V1 The PTVA082407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
RF Power Transistor -- PTVA084007NF-V1 The PTVA084007NF is a 370-watt (P3dB) LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single-ended design...
RF Power Transistor -- PTVA092407NF-V1
RF Power Transistor -- PTVA092407NF-V2
The PTVA092407NF is a 240-watt LDMOS FET manufactured with Wolfspeed's 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design...
RF Power Transistor -- PTVA101K02EV-V1 The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down...
RF Power Transistor -- PTVA102001EA-V1 The PTVA102001EA is a 200-watt LDMOS FET intended for use in power amplifier applications in the 960 to 1600 MHz frequency band. Features include high gain and thermally-enhanced package with...
RF Power Transistor -- PTVA104501EH-V1 The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
RF Power Transistor -- PTVA120121M-V1 The PTVA120121M LDMOS FET is a 12-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
RF Power Transistor -- PTVA120251EA-V2 The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with...
RF Power Transistor -- PTVA120252MT-V1 The PTVA120252MT LDMOS FET is a 25-watt LDMOS FET designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and...
RF Power Transistor -- PTVA120501EA-V1 The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
RF Power Transistor -- PTVA123501EC-V2 The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package. Manufactured...
RF Power Transistor -- PTVA123501FC-V1 The PTVA123501FC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally enhanced package with...
RF Power Transistor -- PTVA127002EV-V1
RF Power Transistor -- PTVA127002EV250
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
RF Power Transistor -- PXAC182002FC-V1 The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include...
RF Power Transistor -- PXAC182908FV-V1 The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include...
RF Power Transistor -- PXAC192908FV-V1 The PXAC192908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1930 to 1995 MHz frequency band. Features include...
RF Power Transistor -- PXAC200902FC-V1
RF Power Transistor -- PXAC200902FCV12
The PXAC200902FC is a 90-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 1805 to 2170 MHz frequency band. Features include...
RF Power Transistor -- PXAC201202FC-V2 The PXAC201202FC is a 120-watt LDMOS FET for use in multi-standard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it...
RF Power Transistor -- MRFE6VP61K25GSR These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input...
RF Power Transistor -- MRF8VP13350GNR3
RF Power Transistor -- MRF8VP13350NR3
This 350 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of 350 W CW...
RF Power Transistor -- MRFE8VP8600HR5
RF Power Transistor -- MRFE8VP8600HSR5
This high power transistor is designed for use in UHF TV broadcast applications. The device has an integrated input matching network for better power distribution and is ideal for use...
RF Power Transistor -- MRFE6VP61K25HR6
RF Power Transistor -- MRFE6VP61K25HS5
This high ruggedness device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. It's unmatched input and...
RF Power Transistor -- MRFE6VP61K25GN6
RF Power Transistor -- MRFE6VP61K25NR6
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- MRFX600GSR5
RF Power Transistor -- MRFX600HR5
RF Power Transistor -- MRFX600HSR5
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. It's unmatched input and output design supports frequency use from 1.8...
RF Power Transistor -- MRFE6VP6600GNR3
RF Power Transistor -- MRFE6VP6600NR3
This high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace, and mobile radio applications. It's unmatched input and output design allows for wide frequency range...
RF Power Transistor -- PH1617-2 Wireless Bipolar Power Transistors

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