Richardson RFPD Datasheets for RF Transistors

RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Product Name Notes
RF Power Transistor -- MRF1517NT1 Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications...
RF Power Transistor -- MRF6VP3450HR5
RF Power Transistor -- MRF6VP3450HR6
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier...
RF Power Transistor -- MRF1535NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications...
RF Power Transistor -- MRF1511NT1
RF Power Transistor -- MRF1513NT1
RF Power Transistor -- MRF1518NT1
Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications...
RF Power Transistor -- MRF141
RF Power Transistor -- MRF141G
RF Power Transistor -- MRF141MP
RF Power Transistor -- MRF151
RF Power Transistor -- MRF151A
RF Power Transistor -- MRF151G
RF Power Transistor -- MRF151GMP
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM...
RF Power Transistor -- MRF173
RF Power Transistor -- MRF173MP
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device make possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF173CQ Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device makes possible solid state transmitters for FM broadcast...
RF Power Transistor -- MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain...
RF Power Transistor -- MRF175GU
RF Power Transistor -- MRF175GV
RF Power Transistor -- MRF176GU
RF Power Transistor -- MRF176GV
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid...
RF Power Transistor -- MRF175LU Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz frequency range. The high power, high gain and broadband performance of each device makes...
RF Power Transistor -- MRF275L Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid...
RF Power Transistor -- MRF7P20040HR3 Designed for CDMA base station applications with frequencies from 2010 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.
RF Power Transistor -- MRF6S27085HSR3
RF Power Transistor -- MRF6S27085HSR5
Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C...
RF Power Transistor -- MRF6S20010GNR1 Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.
RF Power Transistor -- MMRF1014NT1
RF Power Transistor -- MMRF1015GNR1
RF Power Transistor -- MMRF1015NR1
Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
RF Power Transistor -- MRF6VP3091NBR5
RF Power Transistor -- MRF6VP3091NR5
Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications.
RF Power Transistor -- MRF3866R1 Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.
RF Power Transistor -- MRF148A
RF Power Transistor -- MRF148AMP
Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.
RF Power Transistor -- MMRF1315NR1 Designed for wideband defense, industrial and commercial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device is ideal for large-signal, common-source amplifier applications...
RF Power Transistor -- MRF158 Designed for wideband large-signal amplifier and oscillator applications to 500 MHz.
RF Power Transistor -- MRF136Y Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.
RF Power Transistor -- MRF136
RF Power Transistor -- MRF136MP
Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.
RF Power Transistor -- MRF134 Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range.
RF Power Transistor -- MRF137 Designed for wideband large-signal output and driver stages up to 400 MHz range.
RF Power Transistor -- MRF6V2010NBR1
RF Power Transistor -- MRF6V2010NR1
RF Power Transistor -- MRF6V2150NBR1
RF Power Transistor -- MRF6V2150NR1
Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
RF Power Transistor -- MRF448A Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
RF Power Transistor -- MRF154
RF Power Transistor -- MRF154MP
Designed primarily for linear large-signal output stages in the 2.0-100 MHz frequency range.
RF Power Transistor -- MRF157
RF Power Transistor -- MRF157MP
Designed primarily for linear large-signal output stages to 80 MHz.
RF Power Transistor -- MRF140
RF Power Transistor -- MRF140MP
Designed primarily for linear large-signal output stages up to 150 MHz frequency range.
RF Power Transistor -- MRF150
RF Power Transistor -- MRF150MP
Designed primarily for linear large-signal output stages up to150 MHz frequency range.
RF Power Transistor -- MRF6VP11KGSR5 Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
RF Power Transistor -- MRF6VP11KHR5 Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications.
RF Power Transistor -- MRF545 Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
RF Power Transistor -- MRF160
RF Power Transistor -- MRF166C
Designed primarily for wideband large-signal output and driver from 30-500 MHz.
RF Power Transistor -- MRF275G Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz.
RF Power Transistor -- MRF171A
RF Power Transistor -- MRF171AMP
Designed primarily for wideband large-signal output and driver stages from 30-200 MHz
RF Power Transistor -- MRF166W Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
RF Power Transistor -- MRF174 Designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range.
RF Power Transistor -- MMRF1304GNR1
RF Power Transistor -- MMRF1304LR5
RF Power Transistor -- MMRF1304NR1
RF Power Transistor -- MMRF1305HR5
RF Power Transistor -- MMRF1305HSR5
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military...
RF Power Transistor -- MMRF1306HR5
RF Power Transistor -- MMRF1306HSR5
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET. This high ruggedness device is designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and...
RF Power Transistor -- MRF455
RF Power Transistor -- MRF455MP
In the push-pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by MACOM consists of measuring hFE...
RF Power Transistor -- MRF8HP21080HSR5 LDMOS RF Power Transistors; advanced high performance in-package Doherty configuration. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can...
RF Power Transistor -- MMRF1312GSR5 MMRF1312GSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HR5 MMRF1312HR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MMRF1312HSR5 MMRF1312HSR5 is designed for pulse applications operating at frequencies from 900 to 1215 MHz. The device is suitable for use in pulse applications with large duty cycles and long pulses...
RF Power Transistor -- MRF8P20161HSR5 N--Channel Enhancement--Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular...
RF Power Transistor -- MRF8S18210WGHS3 N--Channel Enhancement--Mode Lateral MOSFET
RF Power Transistor -- MRF8P9040GNR1 N--Channel Enhancement--Mode Lateral MOSFETs. Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for...
RF Power Transistor -- MMRF1020-04GNR3 N-Channel Enhancement-Mode Lateral MOSFET. This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The...
RF Power Transistor -- MRF8S19260HR5 N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multi-carrier base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all...
RF Power Transistor -- MRF8P9040NR1 N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for...
RF Power Transistor -- MMRF1004GNR1
RF Power Transistor -- MMRF1004NR1
N-Channel Enhancement-Mode Lateral MOSFETs. Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier...
RF Power Transistor -- MMRF1006HR5
RF Power Transistor -- MMRF1006HSR5
N-Channel Enhancement-Mode Lateral MOSFETs. Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in communications, radar and industrial...
RF Power Transistor -- MMRF1007HSR5
RF Power Transistor -- MMRF1008HR5
RF Power Transistor -- MMRF1008HSR5
RF Power Transistor -- MMRF1009HR5
RF Power Transistor -- MMRF1009HSR5
N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications,...
RF Power Transistor -- MMRF1005HSR5 N-Channel Enhancement-Mode Lateral MOSFETs. RF power transistors designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in defense and commercial CW and pulse...
RF Power Transistor -- MRF837T RF & Microwave Discrete Low Power Transistors. Designed primarily for wideband large signal stages in the 800 MHz and UF frequency ranges. Features: • Specified @ 12.5V, 870 MHz characteristics...
RF Power Transistor -- MRF837GT RF & Microwave Discrete Low Power Transistors. Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features: • Specified @ 12.5V, 870 MHz characteristics...
RF Power Transistor -- MHT2000NR1 RF LDMOS Integrated Power Amplifiers. Wideband integrated circuit is suitable for industrial heating applications operating at 2450 MHz. This multi-stage structure is rated for 26 to 32 V operation in...
RF Power Transistor -- MRF6VP11KGHSR5
RF Power Transistor -- MRF6VP11KGHSR6
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET. Designed primarily for pulsed wideband applications with frequencies up to 150 MHz. Device is unmatched and is suitable for use in...
RF Power Transistor -- MRF7S35015HSR3 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
RF Power Transistor -- MRF6V10010NR4 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device...
RF Power Transistor -- MRF8P20160HSR5 RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class...
RF Power Transistor -- MRF8P20140WGHSR RF Power Field Effect Transistor. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical...
RF Power Transistor -- MRF8P20160HR3 RF Power Field Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class...
RF Power Transistor -- MRF8P20165WHR3 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs. Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz.
RF Power Transistor -- MD7P19130HSR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To...
RF Power Transistor -- MRF8S21120HR5
RF Power Transistor -- MRF8S21120HSR5
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB...
RF Power Transistor -- MRF7S38010HR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class...
RF Power Transistor -- MRF6V14300HR3
RF Power Transistor -- MRF6V14300HR5
RF Power Transistor -- MRF6V14300HSR5
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices...
RF Power Transistor -- MRF8P20100HR5 RF Power Field Effect Transistors, N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies...
RF Power Transistor -- MRF8P8300HR5
RF Power Transistor -- MRF8P8300HSR6
RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs. Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB...
RF Power Transistor -- MRF8P29300HR6 RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in...
RF Power Transistor -- MRF8S21172HR5 RF Power Field Effect Transistors. N-Channel Enhancement - Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in...
RF Power Transistor -- MRF8P23160WHR5
RF Power Transistor -- MRF8P23160WHSR5
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz.
RF Power Transistor -- MRF5S19060NR1 RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of...
RF Power Transistor -- MRF1535FNT1 RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices...
RF Power Transistor -- MRF8P9300HR5 RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class...
RF Power Transistor -- MRF8P20140WHR3
RF Power Transistor -- MRF8P20140WHSR3
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class...
RF Power Transistor -- MRF5S9080NBR1 RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and...
RF Power Transistor -- MRF8S21172HR3
RF Power Transistor -- MRF8S21172HSR3
RF Power Transistor -- MRF8S21172HSR5
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB...
RF Power Transistor -- MRF8P26080HR5 RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB...
RF Power Transistor -- MRF6V2010GNR1 RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable...
RF Power Transistor -- MRF6V12500HR5
RF Power Transistor -- MRF6V12500HSR5
RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in...
RF Power Transistor -- MRF5P21045NR1 RF Power Field-Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual...
RF Power Transistor -- MMRF1017NR3 RF Power LDMOS Transistor, N-Channel Enhancement-Mode Lateral MOSFET. This 80 W RF power LDMOS transistor is designed for wideband RF power amplifiers covering the frequency range of 720 to 960...
RF Power Transistor -- MRF8P9210NR3 RF Power LDMOS Transistor. N-Channel Enhancement - Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and...
RF Power Transistor -- MHT1006NT1 RF Power LDMOS Transistor. RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.
RF Power Transistor -- MHT1001HR5 RF Power LDMOS Transistor. RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.
RF Power Transistor -- MMRF1316NR1 RF Power LDMOS Transistor. This high ruggedness device is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and...
RF Power Transistor -- MMRF1013HR5
RF Power Transistor -- MMRF1013HSR5
RF power transistor designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.
RF Power Transistor -- MMRF1011HR5
RF Power Transistor -- MMRF1011HSR5
RF power transistor designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. This device is suitable for use in pulse applications, such as...
RF Power Transistor -- MMRF1008GHR5 RF power transistor designed for applications operating at frequencies from 900 to 1215 MHz. This device is suitable for use in defense and commercial pulse applications, such as IFF and...
RF Power Transistor -- MRF6V13250HSR5 RF Power transistor designed for CW and pulsed applications operating at 1300 MHz. This device is suitable for use in CW and pulsed applications.
RF Power Transistor -- MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for aerospace and defense applications such...
RF Power Transistor -- MRF6V12250HR5
RF Power Transistor -- MRF6V12250HSR3
RF Power Transistor -- MRF6V12250HSR5
RF Power Transistor -- MRF6VP121KHR5
RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
RF Power Transistor -- MAPR-0912-500S0
RF Power Transistor -- MAPR-1090-350S0
RF Power Transistor -- MAPR-2729-170M
RF Power Transistor -- MAPRST0912-350
RF Power Transistor -- MAPRST0912-50
RF Power Transistor -- MAPRST1030-1KS
RF Power Transistor -- MATR-001214-XL4
RF Power Transistor -- MATR-002735-637
RF Power Transistor -- MCA0802.011
RF Power Transistor -- MDS-GN-750ELMV
RF Power Transistor -- MHT1803B
RF Power Transistor -- MHT2025GNR1
RF Power Transistor -- MMRF1050HR6
RF Power Transistor -- MMRF5016HSR5
RF Power Transistor -- MRF10005
RF Power Transistor -- MRF1000MB
RF Power Transistor -- MRF10031
RF Power Transistor -- MRF1004MB
RF Power Transistor -- MRF10120
RF Power Transistor -- MRF10120-1
RF Power Transistor -- MRF10150
RF Power Transistor -- MRF10350
RF Power Transistor -- MRF10502
RF Power Transistor -- MRF1090MB
RF Power Transistor -- MRF1150MB
RF Power Transistor -- MRF150J
RF Power Transistor -- MRF150MQ
RF Power Transistor -- MRF151MP
RF Power Transistor -- MRF151MQ
RF Power Transistor -- MRF16006
RF Power Transistor -- MRF24300GNR3
RF Power Transistor -- MRF24301HR5
RF Power Transistor -- MRF313
RF Power Transistor -- MRF314
RF Power Transistor -- MRF316
RF Power Transistor -- MRF317
RF Power Transistor -- MRF321
RF Power Transistor -- MRF323
RF Power Transistor -- MRF327
RF Power Transistor -- MRF392
RF Power Transistor -- MRF393
RF Power Transistor -- MRF421
RF Power Transistor -- MRF421MP
RF Power Transistor -- MRF422
RF Power Transistor -- MRF422MP
RF Power Transistor -- MRF426
RF Power Transistor -- MRF426MP
RF Power Transistor -- MRF428
RF Power Transistor -- MRF429
RF Power Transistor -- MRF429MP
RF Power Transistor -- MRF448
RF Power Transistor -- MRF448-QUAD
RF Power Transistor -- MRF448MP
RF Power Transistor -- MRF454
RF Power Transistor -- MRF454MP
RF Power Transistor -- MRF559LF
RF Power Transistor -- MRF8P18265HR5
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the...
RF Power Transistor -- MRF7S24250NR3 The 250 W CW RF power transistor is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz. This device is suitable for use in CW, pulse...
RF Power Transistor -- MDS800 The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The...
RF Power Transistor -- MDSGN-750ELMV The MDSGN-750ELMV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18.5 dB gain, 750 Watts of pulsed RF output power at...
RF Power Transistor -- MHT1002GNR3 The MHT1002GNR3 350 W CW RF power transistor is designed for consumer and commercial cooking applications and industrial heating applications operating in the 915 MHz ISM band.
RF Power Transistor -- MHT1803A The MHT1803A 300 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating from 1.8 to 50 MHz. Features Characterized from 30 to 50...
RF Power Transistor -- MMRF5011N The MMRF5011N 12 W CW RF power GaN transistor is optimized for wideband operation up to 3000 MHz and includes input matching for extended bandwidth performance. With its high gain...
RF Power Transistor -- MRF300AN
RF Power Transistor -- MRF300BN
The MRF300AN and MRF300BN are RF LDMOS Transistors targeting industrial scientific, and medical as well as Radio applications below 250MHz. The new TO-247 package devices feature mirror image drain and...
RF Power Transistor -- MRF24G300HR5 These 300 W CW GaN transistors are designed for industrial, scientific andmedical (ISM) applications at 2450 MHz. These devices are suitable for use inCW, pulse, cycling and linear applications. These...
RF Power Transistor -- MMRF1020-04NR3 This 100 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz. The transistor is also suitable...
RF Power Transistor -- MHT1008NT1
RF Power Transistor -- MHT1108NT1
This 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.
RF Power Transistor -- MMRF5014HR5 This 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high...
RF Power Transistor -- MMRF1317HR5
RF Power Transistor -- MMRF1317HSR5
This 1300 W RF power transistor is designed for applications operating at frequencies between 1020 and 1100 MHz. This device is suitable for use in defense and commercial pulse applications,...
RF Power Transistor -- MRF24G300HSR5 This 300 W CW GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear...
RF Power Transistor -- MHT1004NR3 This 300 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.
RF Power Transistor -- MMRF1024HSR5 This 50 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2496 to 2690 MHz. This part is ideally suited...
RF Power Transistor -- MMRF5300NR5 This 60 W GaN RF power transistor is optimized for wideband pulse operation from 2700 to 3500 MHz and includes input matching for extended bandwidth performance. With its high gain...
RF Power Transistor -- MMRF1016HR5 This 600 W RF power LDMOS transistor is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched and is suitable for use...
RF Power Transistor -- MMRF1022HSR5 This 63 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2110 to 2170 MHz. This part is ideally suited...
RF Power Transistor -- MMRF1023HSR5 This 66W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2300 to 2400 MHz. This part is ideally suited for...
RF Power Transistor -- MRF13750HR5
RF Power Transistor -- MRF13750HSR5
This 750 W CW transistor is designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistor is capable of CW or pulse...
RF Power Transistor -- MMRF1018NBR1
RF Power Transistor -- MMRF1018NR1
This 90 W RF power LDMOS transistor is designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.
RF Power Transistor -- MRF101AN
RF Power Transistor -- MRF101BN
This device is designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The device is exceptionally rugged and exhibits...
RF Power Transistor -- MMRF1320GNR1
RF Power Transistor -- MMRF1320NR1
This high ruggedness device is designed for use in high VSWR defense and commercial radio communications and HF, VHF and UHF radar applications. The unmatched input and output design allows...
RF Power Transistor -- MRF1K50HR5 This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications.
RF Power Transistor -- MMRF1308HR5
RF Power Transistor -- MMRF1308HSR5
This high ruggedness device is designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. It's...
RF Power Transistor -- MMRF1310HR5
RF Power Transistor -- MMRF1310HSR5
This high ruggedness device is designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications.
RF Power Transistor -- MRF1K50GNR5 This high ruggedness device, MRF1K50GNR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MRF1K50NR5 This high ruggedness device, MRF1K50NR5, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio...
RF Power Transistor -- MHTG1200HSR3 This MHTG1200HS 300 W GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear...
RF Power Transistor -- MMRF1314GSR5
RF Power Transistor -- MMRF1314HR5
RF Power Transistor -- MMRF1314HSR5
This RF power device is designed for pulse applications operating at frequencies from 1200 to 1400 MHz. The device is suitable for use in pulse applications and is ideal for...
RF Power Transistor -- MRF6V12500GSR5 This RF power transistor is designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control.
RF Power Transistor -- MMRF5017HSR5 50V GaN 90 W CW over 30-940 MHz Pre-matched input, no output match Single ended NI-400 air cavity ceramic package 1.75 C/W thermal resistance (FEA computed) High ruggedness: handles 10:1...

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