For S-band pulsed radar applications, with typically over 14dB gain, the 2731GN-400V is an internally matched, common source, class AB, GaN on SiC HEMT transistor capable of delivering more than 400 Watts of pulsed RF output power under 200uS, 10% pulsing across the 2700 to 3100 MHz band. Proprietary state of the art GaN on SiC semiconductor technology, internal pre-matching, hermetic seal, all gold metallization, and eutectic attachment result in a device that delivers the highest reliability and excellent ruggedness while making the 2731GN-400V the best choice to gain superior performance in the most demanding system designs.