RF Transistors from Richardson RFPD
RF Power Transistor -- 2729GN-270




The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF output power at 100µs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
Specifications
Manufacturer
Microsemi Corp.
Manufacturer Part Number
2729GN-270
Product Category
RF Transistors
Transistor Technology / Material
GaN
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