The 1011GN-250EL is an internally matched, common source, Class AB, GaN on SiC HEMT transistor/pallet amplifier capable of providing over 20.5 dB typical gain, 250 W of pulsed RF output power under several pulse formats including mode-S ELM across the 1030 to 1090 MHz band. The transistor has internal pre-match for optimal performance and is hermetically sealed. Available in two package types, both the bolt-down flange 55-QQ package and the solder-down earless flange 55-QQP package, as well as mounted in a 50 Ohm IN/OUT pallet, the transistor is designed specifically for IFF, Mode-S, TCAS, and avionics secondary radar applications, and it utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. Export Classification: EAR-99.