The 1214GN-700V is an internally matched, common-source, class-AB GaN-on-SiC HEMT transistor capable of providing over 18 dB gain, 700 W of pulsed RF output power at 300 us pulse width, and 10% duty factor across the 960 MHz to 1215 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for the output stage of L-Band pulsed primary radar systems. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness.