RF Transistors from Richardson RFPD
RF Power Transistor -- 3942GN-120V




The 3942GN-120V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 14 dB gain, 120 Watts of pulsed RF output power at 200uS pulse width, 10% duty factor across the 3900 to 4200 MHz band. This hermetically sealed transistor is designed for C-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
Market Application – 3942GN-120V is designed for C-Band Pulsed Radar
Specifications
Manufacturer
Microsemi Corp.
Manufacturer Part Number
3942GN-120V
Product Category
RF Transistors
Transistor Technology / Material
GaN
More Information
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