RF Transistors from Richardson RFPD
RF Power Transistor -- AFT21H350W03SR6
N-Channel Enhancement-Mode Lateral MOSFET. This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2170 MHz.
Specifications
Product Category
RF Transistors
Power Gain
16.5 dB
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