RF Transistors from Richardson RFPD

RF Power Transistor -- CGHV60170D-GP4

 
 
RF Power Transistor -- CGHV60170D-GP4 -- View Larger Image
RF Power Transistor -- CGHV60170D-GP4-Image

CGHV60170D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.


Specifications

Manufacturer
Wolfspeed
Manufacturer Part Number
CGHV60170D-GP4
Product Category
RF Transistors
Transistor Technology / Material
GaN
Package Type
 
Power Gain
 
Operating Frequency