RF Transistors from Richardson RFPD
RF Power Transistor -- GTRA362002FC-V1
The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
Specifications
Manufacturer
Wolfspeed
Manufacturer Part Number
GTRA362002FC-V1-R0
Product Category
RF Transistors
Transistor Technology / Material
GaN
More Information
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