RF Transistors from Richardson RFPD
RF Power Transistor -- A2G35S160-01SR3
This 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Specifications
Product Category
RF Transistors
Transistor Technology / Material
GaN
More Information
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