RF Transistors from Richardson RFPD
RF Power Transistor -- MRF8P23160WHSR5
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz.
Specifications
Product Category
RF Transistors
Power Gain
14.1 dB
More Information
Similar Products
