RF Transistors from Richardson RFPD

RF Power Transistor -- 1214GN-600VHE

RF Power Transistor -- 1214GN-600VHE -- View Larger Image
RF Power Transistor -- 1214GN-600VHE-Image

The 1214GN-600VHE is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16.9dB gain, 60% drain efficiency, 600 Watts of pulsed RF output power at 300us pulse width, 10% duty factor across the 1200 to 1400 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.


Microsemi Corp.
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RF Transistors
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Power Gain
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