The 1012GN-1000V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 19 dB gain, 1000 W of pulsed RF output power at 32 μs, and 2% duty cycle pulse format across the 1025 MHz to 1150 MHz band. The transistor has internal pre-match for optimal performance. It utilizes gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. The export classification is EAR-99.